Flash memory data saving method

A technology of data storage and flash memory, which is applied in the direction of data error detection, memory address/allocation/relocation, and response error generation, which can solve the problem of system response speed decline and achieve system response speed. The effect of lifting and reducing the number of erasures

Inactive Publication Date: 2009-08-05
SHANGHAI DIGIVISION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the data size is small and written frequently, the response speed of the system will be seriously reduced.

Method used

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  • Flash memory data saving method
  • Flash memory data saving method
  • Flash memory data saving method

Examples

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Embodiment Construction

[0026] figure 1 A storage area of ​​a flash memory is schematically shown. refer to figure 1 As shown, the flash memory 100 includes a plurality of sectors (sectors (sectors) A-D are exemplarily shown in the figure), and each sector can store data. The characteristic of the flash memory is that the writing operation can only be performed after the entire sector is erased, and the erasing operation takes a long time. When small size data is written frequently, the response speed will drop. Therefore, the present invention proposes a flash memory data storage method, which adopts a rollback (rollback) mechanism to realize double backup and fast writing of data.

[0027] In the embodiment of the present invention, two areas in the flash memory are used to store data and do double backup. For example, refer to figure 1 As shown, sector A is used as the first area 101 , and sector B is used as the second area 102 . Of course, in another embodiment, the first area 101 and the ...

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Abstract

The invention relates to a flash memory data saving method that is applicable for frequently written small-size data, comprising steps of: in a data saving process, writing data many times to a first area in the flash memory as an active area, each data having a time stamp; during a predetermined time, processing backup of valid data selected according to time stamp of each data in the first area to a second area as a backup area, erasing the first area, and re-setting the first area as the backup area, the second area as the active area. The method of the invention improves speed of data saving by one erasure and writing many times.

Description

technical field [0001] The invention relates to a data storage method, in particular to a flash memory data storage method. Background technique [0002] In many applications, it is necessary to save and read and write data quickly. Electrically Erasable Read-Only Memory (EEPROM) and flash memory (flash memory) are two optional rewritable storage media. In the field of digital television, there is often a large amount of trivial information to be preserved. Although the size of the data saved each time is small, there are various types and the absolute value of the occupied space is large. Commonly used EEPROM is often not applicable due to insufficient space, and flash memory can provide large-capacity storage as an optional solution. In terms of erasing time, since the flash memory can only be written after erasing the entire sector, the erasing time is relatively long. For data storage with a single large size (for example, equivalent to the capacity of one sector), t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F11/14
Inventor 顾亚平
Owner SHANGHAI DIGIVISION
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