Zinc oxide nano-ultraviolet light sensor and preparation method thereof

A zinc oxide nanometer and sensor technology, which is applied in the direction of zinc oxide/zinc hydroxide, semiconductor devices, and final product manufacturing, and can solve problems such as the practical application of cumbersome and complicated processes

Inactive Publication Date: 2009-09-16
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method provides a method for basic research on nanomaterials, these tediou

Method used

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  • Zinc oxide nano-ultraviolet light sensor and preparation method thereof
  • Zinc oxide nano-ultraviolet light sensor and preparation method thereof
  • Zinc oxide nano-ultraviolet light sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] See attached figure 2 , in this example, ordinary glass is used as the substrate, and a traditional photolithography mask is used as an example to illustrate. Specific steps are as follows:

[0026] 1. Use traditional semiconductor technology to clean ordinary blank glass substrates.

[0027] 2. Make a layer of photoresist mask on the glass substrate using traditional photolithography technology.

[0028] 3. Deposit a layer of 300nm ZnO thin film on the glass substrate as the seed layer.

[0029] 4. Deposit a layer of 50nm Sn film on the substrate as a passivation layer and also as an electrode.

[0030] 5. Use the traditional photoresist removal method to wash off the photoresist to obtain the required interdigitated electrodes.

[0031] 6. A high-pressure hydrothermal reactor with polytetrafluoroethylene lining is used as the reaction vessel, and the aqueous solution is zinc acetate and hexamethylene tetramine with a concentration of 0.005mol / L. Put the sample f...

Embodiment 2

[0035] See attached image 3 , in this example, silicon dioxide is used as the substrate, and a traditional photolithography mask is used as an example to illustrate.

[0036] Specific steps are as follows:

[0037] 1. Clean the silicon dioxide substrate using traditional semiconductor processes.

[0038] 2. Make a layer of photoresist mask on the silicon dioxide substrate using traditional photolithography technology.

[0039]3. Deposit a layer of 200nm aluminum-doped zinc oxide film on the silicon dioxide substrate as a seed layer.

[0040] 4. Deposit a layer of 50nm Cr thin film on the silicon dioxide substrate as a passivation layer, and also as an electrode.

[0041] 5. Use the traditional photoresist removal method to wash off the photoresist to obtain the required interdigitated electrodes.

[0042] 6. A high-pressure hydrothermal reactor lined with polytetrafluoroethylene is used as the reaction vessel, and the aqueous solution is zinc acetate and hexamethylene tet...

Embodiment 3

[0046] See attached Figure 4 , In this example, the flexible substrate PET (polyethylene terephthalate) is used as the substrate, and the metal mask is used as an example to illustrate. Specific steps are as follows:

[0047] 1. Clean the PET flexible substrate with absolute ethanol and deionized water and dry it for use.

[0048] 2. Using a metal mask as a mask, deposit a 30nm gold thin film on the substrate as a seed layer.

[0049] 3. Deposit a layer of 50nm ITO film on the substrate as a passivation layer and also as an electrode.

[0050] 4. A high-pressure hydrothermal reactor with polytetrafluoroethylene lining is used as the reaction vessel, and the aqueous solution is zinc acetate and hexamethylene tetramine with a concentration of 0.001mol / L. Put the sample face down and place it horizontally below the liquid level in the reaction kettle, put the autoclave in a constant temperature box, and keep it at 65°C for three hours.

[0051] 5. Take out the sample, rinse ...

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Abstract

The invention discloses a zinc oxide nano-ultraviolet light sensor and a preparation method thereof. The sensor at least comprises zinc oxide nano-rods horizontally arranged and conductive film electrodes, and the preparation method is as follows: a photoresist mask of an inserted electrode is made on a substrate by using traditional photoetching technology, a passivation layer without affinity for ZnO is deposited on a seed layer with affinity for ZnO deposited on the substrate, and the ZnO nano-bars are grown by using hydro-thermal method that is a low-temperature and stable method having high repetitiveness; owing to competition for space when the nano-bars are grown, most nano-bars are grown parallel to the substrate and are connected in the middle of a channel so as to form the ZnO nano-ultraviolet light sensor, thereby having smaller dark current (about 3nA per 1V bias). The invention has simple technology and low cost, and can prepare large-scale ZnO nano-sensor array; and the once in place technology also guarantees the performances of apparatus.

Description

technical field [0001] The invention belongs to the field of preparation and application of nanometer materials, and also belongs to the field of optoelectronics. In particular, it relates to a zinc oxide nano-ultraviolet photosensitive sensor and a preparation method thereof, especially a method for preparing a horizontally grown zinc oxide array at low temperature through a hydrothermal process, Background technique [0002] One of the main motivations for studying ZnO, a wide bandgap semiconductor, is that ZnO has great potential in ultraviolet photosensitive detectors. In recent years, ZnO films (Yadav H K, Sreenivas K and Gupta V 2007 Appl. Phys. Lett 90 172113), nanowires (Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H and Wang D 2007 Nano Lett.71003), Nano Rod (Ahn S E, Lee J S, Kim H, Kim S, Kang B H, Kim K H and Kim G T2004 Appl.Phys.Lett.84 5022), Nano Four Needle (Newton M C, Firth S and Warburton P A2006 Appl.Phys.Lett.), nanoribbons ...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0296C01G9/02H01L31/0224H01L31/18
CPCY02P70/50
Inventor 方国家刘逆霜龙浩
Owner WUHAN UNIV
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