Packaging structure and method of photoelectronic device
A technology of optoelectronic devices and packaging structures, applied in the field of optoelectronics, can solve problems such as device performance degradation, stability degradation, and material deterioration, and achieve the effects of prolonging device life, simplifying processes, and reducing costs
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Embodiment 1
[0035] Such as figure 1 As shown, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N,N'-bis(naphthylidene-1-yl)-N,N'-bis(phenyl) - benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, inorganic package Material layer 21 is Al 2 o 3 , the UV-curable resin layer 22 includes 70% shellac, 18% reactive diluent and 12% triaryl sulfur type hexafluorophosphonium salt, the number of cycles n is 24, and the device structure is:
[0036] Glass substrate / ITO / NPB(50nm) / TPBi(30nm) / Mg:Ag(200nm) / [Al 2 o 3 (200nm) / UV curable resin (100nm)] 24
[0037] The preparation method is as follows:
[0038] ①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;
[0039] ②Transfer the clean substrate to the high vacuum evaporation chamber, and keep the pressure of the organic cav...
Embodiment 2
[0047] Such as figure 1 As shown, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N,N'-bis(naphthylidene-1-yl)-N,N'-bis(phenyl) - benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, inorganic package Material layer 21 is Al 2 o 3 , the UV-curable resin layer 22 includes 71% shellac, 17% reactive diluent and 12% triaryl sulfur type hexafluorophosphonium salt, the number of cycles n is 20, and the device structure is:
[0048] Glass substrate / ITO / NPB(50nm) / TPBi(30nm) / Mg:Ag(200nm) / [Al 2 o 3 (200nm) / UV curable resin (100nm)] 20
[0049] The preparation method is similar to Example 1.
Embodiment 3
[0051] Such as figure 1 As shown, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N,N'-bis(naphthylidene-1-yl)-N,N'-bis(phenyl) - benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, inorganic package Material layer 21 is Al 2 o 3 , the UV-curable resin layer 22 includes 71% shellac, 18% reactive diluent and 11% triaryl sulfur type hexafluorophosphonium salt, the number of cycles n is 16, and the device structure is:
[0052] Glass substrate / ITO / NPB(50nm) / TPBi(30nm) / Mg:Ag(200nm) / [Al 2 o 3 (200nm) / UV curable resin (100nm)] 16
[0053] The preparation method is similar to Example 1.
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