Sputtering target and oxide semiconductor film
A sputtering target and oxide technology, which is applied in the field of sputtering targets and oxide semiconductor films, can solve the problems of unrecorded sputtering targets, no specific resistance value, etc. The effect of abnormal discharge
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Embodiment 1
[0257] In by weight ratio 2 o 3 : Ga 2 o 3 :ZnO=45:30:25, the weighing specific surface area is 6m 2 / g and indium oxide powder with a purity of 99.99% and a specific surface area of 6m 2 / g of gallium oxide powder with a purity of 99.99% and a specific surface area of 3m 2 / g and zinc oxide powder with a purity of 99.99%, mixed and pulverized using a wet media agitation mill. In addition, 1 mmφ zirconia beads were used for the media of the wet media agitation mill.
[0258] Then, the specific surface area after the mixing and pulverization of each raw material was increased by 2m compared with the specific surface area before pulverization. 2 / g, it was dried with a spray dryer. The obtained mixed powder is filled into a mold and press-molded with a cold press to form a molded body.
[0259] The obtained molded body was sintered in an oxygen atmosphere at a high temperature of 1400° C. for 4 hours while circulating oxygen gas. In this way, a sintered body with a ...
Embodiment 2
[0263] Approximately In by weight ratio 2 o 3 : Ga 2 o 3 : ZnO=55:25:20 Weigh indium oxide powder with a median particle size of 1.5 μm, gallium oxide powder with a median particle size of 2.0 μm, and zinc oxide powder with a median particle size of 1.0 μm, and stir with a wet medium Mill for mixing and crushing. In addition, 1 mmφ zirconia beads were used for the media of the wet media agitation mill.
[0264] After that, the average median diameter of each raw material after mixing and pulverization was 0.8 μm, and then dried with a spray dryer. The obtained mixed powder is filled into a mold and press-molded with a cold press to form a molded body.
[0265] The obtained molded body was sintered in an oxygen atmosphere at a high temperature of 1400° C. for 4 hours while circulating oxygen. In this way, a sintered body with a density of 6.14 g / cm can be obtained without the calcining process. 3 Sintered body for IGZO sputtering target. The presence of ZnGa in the sint...
Embodiment 3
[0268] Approximately In by weight ratio 2 o 3 : Ga 2 o 3 :ZnO=35:25:40 Weigh indium oxide powder with a median particle size of 1.5 μm, gallium oxide powder with a median particle size of 2.0 μm, and zinc oxide powder with a median particle size of 1.0 μm, and use a wet Mixing and pulverization was carried out in a media agitation mill, and zirconia beads of 1 mmφ were used as media in a wet media agitation mill.
[0269] After that, the average median diameter of each raw material after mixing and pulverization was 0.8 μm, and then dried with a spray dryer. The obtained mixed powder is filled into a mold and press-molded with a cold press to form a molded body.
[0270] The obtained molded body was sintered in an oxygen atmosphere at a high temperature of 1400° C. for 4 hours while circulating oxygen. In this way, a sintered body with a density of 6.02 g / cm can be obtained without the calcining process. 3 Sintered body for IGZO sputtering target. The presence of ZnGa i...
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