Unlock instant, AI-driven research and patent intelligence for your innovation.

Micromechanical structure and method of manufacturing micromechanical structure

A micromechanical structure and micromechanical technology, applied in the manufacture of microstructure devices, microstructure technology, microstructure devices, etc., can solve problems such as increasing the complexity of the manufacturing process

Inactive Publication Date: 2012-02-15
AGENCY FOR SCI TECH & RES
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the deposition and patterning of the sacrificial layer may lead to increased complexity of the manufacturing process and additional cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micromechanical structure and method of manufacturing micromechanical structure
  • Micromechanical structure and method of manufacturing micromechanical structure
  • Micromechanical structure and method of manufacturing micromechanical structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0103] Exemplary embodiments described below may provide surface micromachined wide bandgap nano / micromachined structures (including, for example, ZnO, GaN, and nanodiamond) grown directly on silicon and / or SOI substrates using dry release techniques. The dry release technique employed in this exemplary embodiment is the use of xenon difluoride (XeF 2 ), which can selectively etch silicon and / or SOI substrates, thereby undercutting wide bandgap materials. In an exemplary embodiment, a dry release technique is used to etch the silicon "sacrificial layer" and / or the silicon overlay layer inherent to the silicon and SOI substrate, thereby creating air gap. As such, in an exemplary embodiment, no additional dedicated sacrificial layer needs to be deposited and patterned. On the other hand, control of the air gap thickness can be maintained in exemplary embodiments by, for example, providing an SOI substrate with a selected silicon overlay layer thickness. In other words, in thi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a micromechanical structure and a method of manufacturing the micromechanical structure. The micromechanical structure includes a silicon (Si)-based substrate; a micromechanical element formed directly on the substrate; and an undercut formed under a release portion of the micromechanical element; wherein the undercut is in the form of A notch formed in a silicon-based substrate.

Description

technical field [0001] The present invention generally relates to micromechanical structures and methods of fabricating micromechanical structures. Background technique [0002] In current semiconductor fabrication techniques, wide bandgap materials are typically used for optoelectronic and microelectronic devices. One such material is gallium nitride (GaN). Typically GaN has various properties such as a wide bandgap (e.g. E at 300K g ~3.4eV), larger elastic modulus, higher piezoelectric coefficient and piezoresistive coefficient, and chemical inertness. Therefore, GaN is a suitable material for microelectromechanical systems (MEMS) applications, especially under harsh conditions such as high temperature piezoelectricity and high breakdown voltage. [0003] Typically, due to the lack of GaN single crystals, GaN heteroepitaxial layers for optoelectronic and microelectronic device applications are deposited on "outer" substrates with a lattice mismatch of about 16% such as ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00
CPCB81C1/00484B81C2201/0132B81C2201/0109B81C2201/017B81B7/02B81C1/00
Inventor 苏迪兰赞·特里帕斯维克纳什·s/o·莎姆伽纳赞
Owner AGENCY FOR SCI TECH & RES