Unlock instant, AI-driven research and patent intelligence for your innovation.

Chemical mechanical polishing method and polishing device

A technology of chemical mechanics and grinding methods, which is applied in the direction of grinding devices, grinding machine tools, grinding tools, etc., can solve problems such as film thickness differences, achieve the effects of reducing area, reducing film thickness differences, and enhancing grinding uniformity

Inactive Publication Date: 2012-01-18
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in actual production, it is found that there are still differences in the thickness of the film layer obtained after the grinding operation in the same area with the same driving value

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing method and polishing device
  • Chemical mechanical polishing method and polishing device
  • Chemical mechanical polishing method and polishing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0038] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A chemical mechanical polishing method includes that: subregion distribution of films on a substrate and film thickness corresponding to each subregion are obtained, and an open boundary is arranged between a subregion and other adjacent subregions; a motivation value is obtained according to the functional relation between the film thickness and the motivation value; and the subregions are polished by the motivation value. The invention also provides a chemical mechanical polishing device, and the chemical mechanical polishing device can improve the polishing evenness of different regions inone film and the polishing evenness of one area applied with the same drive value when being used for chemical mechanical polishing operation.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical grinding method and a grinding device. Background technique [0002] Chemical Mechanical Planarization (CMP) is a global surface planarization technology used in the semiconductor manufacturing process to reduce the thickness variation and surface topography of the film layer on the wafer. Because CMP can accurately and uniformly grind the film layer on the wafer to the required thickness and flatness, it has become the most widely used surface planarization technology in the semiconductor manufacturing process. [0003] In practice, this technique is often applied to grinding processes without a grinding stop layer. As an example, such as figure 1 As shown, when grinding the surface of the pre-metal dielectric 30 (PMD) layer on the semiconductor substrate 10 (including the gate structure 20), generally, the grinding operation is contin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304B24B37/04B24B37/11B24B37/34
Inventor 李健刘俊良
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP