Bad block management (BBM) method and device for Nand Flash

A management method and technology for a management device, applied in the directions of memory address/allocation/relocation, etc., can solve the problem of low efficiency of firmware upgrade of terminals, and achieve the effect of fast search speed and improved efficiency

Inactive Publication Date: 2009-12-02
ZTE CORP
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] In view of this, the main purpose of the present invention is to provide a non-linear flash memory bad block management method and device to solve the problem of low efficiency of terminal firmware upgrades caused by existing bad block management methods

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  • Bad block management (BBM) method and device for Nand Flash
  • Bad block management (BBM) method and device for Nand Flash
  • Bad block management (BBM) method and device for Nand Flash

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Embodiment Construction

[0033] The technical solutions of the present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0034] A bad block management method of NandFlash according to the present invention divides the storage space of NandFlash into a data area and a reserved area, the data area is used to store data, and the reserved area is used as a replacement area for bad blocks in the data area to replace data Bad blocks in the zone are used to store data. Such as figure 1 As shown, the method mainly includes the following steps:

[0035] Step 101 , when the terminal performs a data erasing or writing operation on the data area of ​​the NandFlash, it obtains the generated bad block information.

[0036] When the terminal performs data erasing or writing operations on the data area of ​​NandFlash, it directly skips the factory bad blocks, and does not perform data erasing and writing operations on the factory bad blocks. When t...

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PUM

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Abstract

The invention discloses a bad block management method and a device for a Nand Flash, in which the memory space of the Nand Flash is divided into data areas and reserve areas. The bad block management method comprises the following steps: generated bad block information is obtained when data scrubbing or writing is operated in the data areas of the Nand Flash; available substitute blocks which correspond to the bad blocks are chosen in the reserve areas of the Nand Flash; data scrubbing or writing is carried out on the substitute blocks. The invention also discloses a bad block management device for Nand Flash, the substitute blocks are used for realizing scrubbing, writing and other operations of the bad blocks, the mapping relationship between the bad blocks and the substitute blocks is only needed to be established, and the substitute blocks can be found quickly on the premise of establishing; the substitute operation has no effect on other normal blocks. In addition, the invention can be applied into the firware upgrading of terminals, thus avoiding effects on firware upgrading caused by bad blocks and improving the efficiency of firware upgrading.

Description

technical field [0001] The invention relates to bad block management technology of storage space, in particular to a bad block management method and device of non-linear flash memory (NandFlash). Background technique [0002] With the rapid development of the modern information society, terminal devices such as mobile phones have gradually become indispensable communication tools in people's work and life. As terminals have higher and higher requirements for information storage, non-linear flash memory (NandFlash) is more and more widely used in terminals due to its advantages of large capacity and low cost. NandFlash can store data and codes. Because NandFlash has certain bad blocks when it leaves the factory, these bad blocks that exist when it leaves the factory are called factory bad blocks, and NandFlash is also prone to bad blocks during the use process. Once a bad block is generated, it will affect the read and write operations of NandFlash. Therefore, it is very nec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06
Inventor 王志慧谢仁艿徐金禄段红乐
Owner ZTE CORP
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