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Semiconductor device, semiconductor substrate and production method thereof

A semiconductor and substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as band-band tunneling, data destruction, and short distances

Inactive Publication Date: 2009-12-30
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there will be some difficulties associated with the conventional 1-T DRAM, for example, the distance between the gate pattern WL and each doped region will be short, which may result in band-to-bandtunneling, BTBT) phenomenon
In addition, in the case of conventional 1-T DRAM, data destruction occurs due to repeated reading of data and increased retention time.

Method used

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  • Semiconductor device, semiconductor substrate and production method thereof
  • Semiconductor device, semiconductor substrate and production method thereof
  • Semiconductor device, semiconductor substrate and production method thereof

Examples

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Embodiment Construction

[0033] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. In this regard, the present invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Accordingly, exemplary embodiments are merely described below to explain aspects of the present invention by referring to the figures.

[0034] figure 1 A cross-sectional view of a 1-transistor dynamic random access memory (1-T DRAM) is shown as an example for comparison with exemplary embodiments of the present invention.

[0035] figure 2 Yes figure 1 The circuit diagram of the 1-T DRAM on which modeling was performed.

[0036] refer to figure 1 and figure 2 , the 1-T DRAM of the comparative example can be modeled in the form of a bipolar junction transistor (BJT), but essentially has the structure of a metal o...

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Abstract

The invention discloses a semiconductor substrate, a semiconductor device and a production method thereof. A semiconductor device includes a semiconductor substrate, a gate pattern disposed on the semiconductor substrate, a body region disposed on the gate pattern and a first impurity doping region and a second impurity doping region. The gate pattern is disposed below the body region and the first impurity doping region and the second impurity doping region.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2008-0059057 filed on Jun. 23, 2008, the disclosure of which is incorporated herein by reference in its entirety. technical field [0002] Exemplary embodiments of the present invention relate to a semiconductor device and a semiconductor substrate, and more particularly, to a semiconductor device and a semiconductor substrate each including a gate pattern disposed under a main body region. Background technique [0003] Recently, conventional 1-transistor dynamic random access memory (1-T DRAM) constructed by a single transistor without capacitors has been used. The 1-T DRAM can be fabricated using a simple fabrication process, and the 1-T DRAM has an improved sensing margin. [0004] However, there will be some difficulties associated with the conventional 1-T DRAM, for example, the distance between the gate pattern WL and each doped region may be short, thereby possibly generating band-to-band t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L29/78H01L29/73H01L29/06H01L21/8242
CPCH01L21/84H01L27/108H01L29/7841H01L27/10802H01L27/10844H01L27/1203H10B12/20H10B12/01H10B12/00H01L21/18H10B99/00
Inventor 车大吉金元住李太熙朴允童
Owner SAMSUNG ELECTRONICS CO LTD