Method for writing data into EEPROM and device thereof

A technology for writing data and block data, which is applied in information storage, static memory, instruments, etc., and can solve problems such as low efficiency, long time-consuming data writing, and slow writing speed

Inactive Publication Date: 2010-02-24
BEIJING WATCH DATA SYST
View PDF0 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the above method, the writing of each piece of data needs to be written into the EEPROM twice, once the old data is written into th

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for writing data into EEPROM and device thereof
  • Method for writing data into EEPROM and device thereof
  • Method for writing data into EEPROM and device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Embodiments of the present invention provide a method for writing data to EEPROM, such as figure 1 shown, including:

[0023] Step S101, write each block of data that needs to be written into the EEPROM into the RAM.

[0024] Step S102 , acquiring each block of data from the RAM, writing it into the backup area of ​​the EEPROM at one time, and setting valid flags corresponding to all the blocks of data in the backup area as valid.

[0025] Step S103, writing each block of data into the destination area of ​​the EEPROM.

[0026] Step S104 , setting the valid flag bit to invalid, and erasing each block of data stored in the backup area.

[0027] The method and device provided by the present invention will be described in detail below in conjunction with the accompanying drawings, taking writing data to the EEPROM in the smart card as an example (this method is also applicable to writing data to the EEPROM of other devices).

[0028] figure 2 Shown is the flow chart o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for writing data into an EEPROM and a device thereof; the method comprises: writing all data needed to be written into the EEPROM into a RAM; acquiring all the data from the RAM, writing the acquired data into a backup area of the EEPROM for once, and setting effective marker bits corresponding to all the data in the backup area to be effective; respectively writing the data into a target area of the EEPROM; and setting the effective marker bits to be ineffective, and erasing the data stored inside the backup area. The method and the device can ensure the datewriting to be atomicity operation and improves the efficiency for writing the data compared with the prior art.

Description

technical field [0001] The invention relates to the application field of erasable and programmable read-only memory EEPROM, in particular to a method and device for writing data into EEPROM. Background technique [0002] At present, in some EEPROM applications, due to the importance and sensitivity of the data stored in it, such as the EEPROM in the smart card, when performing business services such as debiting, writing transaction information, and transaction details, it is required to write to the EEPROM in the smart card. The data is an atomic operation, that is, all the data that needs to be written into the EEPROM for a business is executed, either all of them are written, or none of them are written. However, the power supply of the smart card depends on the external environment, and it is possible that a power failure occurs in any step of writing data to the EEPROM in the smart card, resulting in interruption of data writing. [0003] The existing data writing metho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C16/10
Inventor 车德军于付真
Owner BEIJING WATCH DATA SYST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap