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An electronic device comprising a convertible structure

一种转换结构、电子装置的技术，应用在电路、电气元件、电固体器件等方向，能够解决高功耗等问题，达到减轻功率的需求、提高功率效率、提高热效率的效果

Inactive Publication Date: 2010-03-03
NXP BV
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  • Abstract
  • Description
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Problems solved by technology

[0009] However, programming memory cells according to US 6,800,563 may require high power consumption

Method used

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  • An electronic device comprising a convertible structure
  • An electronic device comprising a convertible structure
  • An electronic device comprising a convertible structure

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Embodiment Construction

[0057] The descriptions in the illustrations are general. In the different drawings, the same reference signs are used to refer to similar or identical components.

[0058] In the following, reference will be made to figure 1 A phase change material memory cell 100 according to an example embodiment of the present invention is described.

[0059] The memory cell 100 includes a first electrode 101 and a second electrode 102 . Between the first electrode 101 and the second electrode 102, a sinusoidally curved phase change material structure 103 is provided and connected to the first electrode 101 and the second electrode 102, wherein the phase change material structure 103 can be The Joule heat generated by the application of a suitably high current between 101 and 102 is used to switch between the crystalline and amorphous states. In the crystalline state and the amorphous state, the phase change material structure 103 has different values ​​of electrical conductivity.

[0...

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Abstract

An electronic device (100), the electronic device (100) comprising a first electrode (101), a second electrode (102) and a convertible structure (103) connected between the first electrode (101) and the second electrode (102), which convertible structure (103) is convertible between at least two states by heating, wherein the convertible structure (103) has different electrical properties in different ones of the at least two states, wherein the convertible structure (103) is curved in a manner to increase a length of a path of an electric current propagating through the convertible structure(103) between the first electrode (101) and the second electrode (102).

Description

technical field [0001] The present invention relates to an electronic device. [0002] Furthermore, the present invention relates to a method of manufacturing an electronic device. Background technique [0003] Flash sizes beyond the 45nm node have become a serious problem in the non-volatile memory space. Technologies facing this challenge include ferroelectric memory, magnetic memory, and phase-change memory, which is expected to replace flash memory and has shown properties that can replace other types of memory, such as DRAM. Phase-change memory is a viable solution for unified memory structures that are an important step in the field of electronics. OTP ("One Time Programmable") and MTP ("Many Time Programmable") memories also open up an area for phase change memory that may present a huge opportunity. [0004] Phase change memory is based on reversible memory switching using, for example, chalcogenide materials. The ability of these materials to undergo rapid phase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
CPCG11C23/00G11C13/0004H01L45/04H01L27/24H10B63/30H10N70/231H10N70/823H10N70/8825H10N70/8828H10N70/063
Inventor 戴维·狄卡斯特罗罗曼·德卢涅
Owner NXP BV
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