IGBT series circuit based on control of ARM microprocessor

A microprocessor and series circuit technology, applied in control/regulation systems, instruments, electrical components, etc., can solve problems such as IGBT damage, and achieve the effect of reducing interference, reducing costs, and circuit introduction.
CN101728952AInactive Publication Date: 2010-06-09ZHEJIANG UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG UNIV
Publication Date
2010-06-09
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses an IGBT series circuit based on the control of an ARM microprocessor. The series circuit comprises an ARM microprocessor S3C2410PWM output circuit, a plurality of IGBT drive circuits, a plurality of IGBT protective circuits of the number of which is equal to that of the IGBT drive circuits and a plurality of voltage monitoring circuits the number of which is equal to that of the IGBT drive circuits. Ten IGBT series circuits are simulated; and the installation design picture is in a practical application connection mode. A PWM signal sent by an S3C2410 timer is the input signal of the driver M57962L; the drive circuits accurately control on and off of IGBT; the protective circuit comprises an IGBT overvoltage protective circuit, a grid resistor and a static grading resistor, and can protect normal operation of IGBT; the voltage monitoring circuit monitors the voltage of an M57962L power supply power source module to lead the circuit to be operated normally. The IGBT series circuit of the invention can realize series connection of a plurality of IGBTs, and can be applied in high-voltage equipment.
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Description

technical field

[0001] The invention relates to an IGBT series circuit controlled by an ARM microprocessor. Background technique

[0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device born in the 1980s. It is a composite device that integrates power MOSFET and GTR on one chip. Its input is very MOSFET and its output is very GTR. Therefore, IGBT has the advantages of fast response and easy driving of MOSFET, high blocking voltage and strong current carrying capacity of GTR. Its operating frequency is within tens of kilohertz, and it has been widely used in various power converters. The biggest advantage of the IGBT is that it can withstand the current impact no matter in the on state or the short circuit state, and because of its short turn-off delay time, it is easy to realize the series connection of devices.

[0003] Although some manufacturers have developed high-voltage IGBT modules, such as the 3.3Kv / 1.2kA huge-capacity IGBT module...

Claims

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