Forming P-N junction on jigsaw diamond substrate

Abstract

The invention provides a method for forming a P-N junction on a jigsaw diamond substrate. The invention provides a method for manufacturing and using a semiconductor single crystal diamond body, and comprises the semiconductor single crystal diamond body manufactured with the method. In a state sample, the method for manufacturing the semiconductor single crystal diamond body comprises that a plurality of diamond segments are arranged at extremely close locations under conditions of high-pressure and combination with a melted catalyst and a carbon source, wherein the diamond segments are arranged in the direction of single crystal; the diamond segments are maintained to be under high pressure and in the melted catalyst until the diamond segments are mutually connected to lead the bonding to be formed between the diamond and the diamond, in order to form a substantial single-crystal diamond body; after the single-crystal diamond body is formed, a homogeneous epitaxial single-crystal diamond body layer is deposited on the single-crystal diamond body; a dopant can be led into the homogeneous epitaxial single-crystal diamond body layer to form a semiconductor single-crystal diamond layer.

Description

technical field [0001] The present invention generally relates to a diamond P-N junction and related methods. Accordingly, the present invention pertains to the fields of chemistry, metallurgy, materials science, physics and high pressure technology. Background technique [0002] Due to its extreme hardness, atomic density and high thermal conductivity, diamond is an ideal material for many applications. Therefore, a large diamond body is useful for many applications, including related tools, substrates, electronic components, etc. The diamond body includes a substantially single crystallographic orientation, and is particularly highly welcomed by semiconductor and heat sink related industries. [0003] As computers and other electronic devices become smaller and faster, the demand for use in semiconductor devices has increased dramatically. These increased demands have increased many problems due to the accumulation of charge carriers, such as the inherent quantum fluctuat...

AI Technical Summary

Problems solved by technology

[0007] Unfortunately, currently known high-pressure crystal synthesis methods also have a number of disadvantages that limit their ability to produce large, high-quality crystals. For example, isothermal methods are generally limited to the production of smaller crystals that are Helpful in cutting, abrasive and grinding applications

The temperature gradient method can be used to make larger diamonds, but product productivity and quality are limited; many methods have been used to try to overcome these limitations, some methods combine many diamond seeds, however, the temperature gradient within the seed crystal makes It cannot achieve optimal growth conditions in the state of more than one seed crystal; and some methods are related to providing two or more temperature gradients. Diamonds are usually only produced in smaller parts of these reaction assemblies; some methods are about adjusting temperature gradients to compensate for some limitations

However, this approach requires additional expense and requires controlled variables to simultaneously control the growth rate and diamond quality at different temperatures and growth materials.

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