Deflection angle multi-line cutting method and cutting device thereof
A multi-line cutting and angle technology, applied in fine working devices, stone processing equipment, manufacturing tools, etc.
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Embodiment 1
[0031] Embodiment 1, off-angle multi-wire cutting method, multi-wire cutting through chamfering two silicon ingots at the same time, the first silicon ingot and the second silicon ingot are fixed on the dovetail seat 3, the first silicon ingot The central axis E1 of the first silicon ingot is distributed parallel to the central axis E2 of the second silicon ingot, and the cross section of the first silicon ingot along the direction perpendicular to the ground is distributed with a first upper inner vertex angle A1, a first upper outer vertex angle B1, The first lower outer apex angle C1, the first lower inner apex angle D1; the second upper inner apex angle A2, the second upper outer apex angle B2, the second The lower outer vertex angle C2, the second lower inner vertex angle D2; the distance between the first lower outer vertex angle C1 and the horizontal line is higher than the distance between the first lower inner vertex angle D1 and the horizontal line; the second lower o...
Embodiment 2
[0032] Embodiment 2, off-angle multi-wire cutting method, multi-wire cutting through chamfering two silicon ingots at the same time, the first silicon ingot and the second silicon ingot are all fixed on the dovetail seat 3, the first silicon ingot The central axis E1 of the first silicon ingot is distributed parallel to the central axis E2 of the second silicon ingot, and the cross section of the first silicon ingot along the direction perpendicular to the ground is distributed with a first upper inner vertex angle A1, a first upper outer vertex angle B1, The first lower outer apex angle C1, the first lower inner apex angle D1; the second upper inner apex angle A2, the second upper outer apex angle B2, the second The lower outer corner C2, the second lower inner corner D2; the distance of the first lower outer corner C1 perpendicular to the horizontal line is 1.6 mm higher than the distance of the first lower inner corner D1 perpendicular to the horizontal line; the second lowe...
Embodiment 3
[0033]Embodiment 3, off-angle multi-wire cutting method, simultaneously multi-wire cutting two silicon ingots processed by chamfering, the first silicon ingot and the second silicon ingot are all fixed on the dovetail seat 3, the first silicon ingot The central axis E1 of the first silicon ingot is distributed parallel to the central axis E2 of the second silicon ingot, and the cross section of the first silicon ingot along the direction perpendicular to the ground is distributed with a first upper inner vertex angle A1, a first upper outer vertex angle B1, The first lower outer apex angle C1, the first lower inner apex angle D1; the second upper inner apex angle A2, the second upper outer apex angle B2, the second The lower outer corner C2, the second lower inner corner D2; the distance of the first lower outer corner C1 perpendicular to the horizontal line is 1.4mm higher than the distance of the first lower inner corner D1 perpendicular to the horizontal line; the second low...
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