Gas path device for metal organic chemical vapor deposition equipment

A metal-organic and chemical deposition technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as difficult precise control of gas flow, influence on the quality of generated crystals, and large control errors

Active Publication Date: 2012-06-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, if the selected mass flow meter range is too large, it is difficult to achieve precise control of the gas flow, especially in the case of small flow, the control error will be large, which will affect the quality of the final crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas path device for metal organic chemical vapor deposition equipment
  • Gas path device for metal organic chemical vapor deposition equipment
  • Gas path device for metal organic chemical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.

[0021] The gas path device for metal-organic chemical deposition equipment according to the present invention includes: a gas inlet 0; multiple groups of gas paths drawn in parallel from the inlet 0, each group of gas paths includes a first sub-gas path arranged in parallel and the second sub-gas path, each of the first sub-gas path and the second sub-gas path can be selectively communicated with the growth chamber and the evacuation channel, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a gas path device for metal organic chemical vapor deposition (MOCVD) equipment. The gas path device comprises a gas inlet and a plurality of groups of gas paths which are led out from the gas inlet and arranged in parallel, wherein each group of gas paths comprises a first sub gas path and a second sub gas path arranged in parallel, and each of the first sub gas path and the second sub gas path can be selectively communicated with a growth chamber and communicated with an emptying passage; when the gas passes through one group of air paths, the gas selectively flows through one of the first sub gas path and the second sub gas path in the group of air paths; and the first sub gas path is provided with a first flow meter, the second sub gas path is provided with a second flow meter, and the maximum measuring range of the first flow meter is greater than that of the second flow meter. The gas path device realizes precise control of the gas from large flow to small flow in the MOCVD equipment through the large measuring range flow meter and the small measuring range flow meter and the corresponding design of gas path switching so as to realize high-quality epitaxial growth of materials under different process conditions.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a gas circuit device for metal organic chemical deposition equipment. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, Metal Organic Chemical Vapor Deposition equipment, is the key equipment for the research and production of compound semiconductor epitaxial materials, especially suitable for large-scale industrial production of compound semiconductor functional structural materials, and cannot be replaced by other semiconductor equipment The core semiconductor equipment is the main means of producing semiconductor optoelectronic devices and microwave device materials in the world today, and is an indispensable strategic high-tech semiconductor equipment for the development of today's information industry and national defense high-tech breakthroughs. [0003] To grow thin film materials with metal orga...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/18C23C16/455
Inventor 冉军学王晓亮胡国新肖红领张露殷海波李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap