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Apparatus for delivering precursor gases to an epitaxial growth substrate

一种外延生长、前体的技术，应用在晶体生长、单晶生长、运输和包装等方向，能够解决物理空间有限、损害机械基片转移系统效率等问题，达到准确输送的效果

Inactive Publication Date: 2010-09-29
SOITEC SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, such devices have not yet appeared, at least because the physical space in growth chambers suitable for commercial production is very limited, and the addition of other devices may compromise the efficiency of mechanical substrate transfer systems or may be affected by, for example, inlet and outlet lines. The limitation of the available gap

Method used

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  • Apparatus for delivering precursor gases to an epitaxial growth substrate
  • Apparatus for delivering precursor gases to an epitaxial growth substrate
  • Apparatus for delivering precursor gases to an epitaxial growth substrate

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Embodiment

[0054] For GaN grown by HVPE, the inner injector of the present invention can be constructed from quartz and a SiC plate placed on the injector to facilitate heating of the injector and the gas flowing therein. The SiC plate enables more efficient heat transfer from the radiant heating source to the injection flow path. The precursor is NH 3and GaCl 3 :NH 3 Flow through the internal syringe at a rate of about 1SLM ~ 5SLM (standard liters / minute); carry GaCl 3 N 2 Carrier gas also flows through the inner injector at a rate of about 1 SLM to 5 SLM. In addition, other gases can be introduced through additional lateral flow input ports at flow rates ranging from about 0 SLM to about 50 SLM to better optimize gas flow on the growth substrate. In the growth chamber shown with Figure 3A ~ 3C An inner syringe similar to the embodiment illustrated in , 4 and 5 is suitable for this application.

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Abstract

This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.

Description

technical field [0001] The present invention relates to vapor phase epitaxial growth equipment, in particular, provides means for heating and delivering precursor gases into an epitaxial growth chamber; the invention is particularly useful for equipment for mass growth of GaN. Background technique [0002] Halide (or hydride) vapor phase epitaxy (HVPE) of GaN and other Group III-V compounds has a known problem that results in inefficient conversion of precursor gases to GaN at the substrate. One issue concerns the temperature of the precursor gas. In the case of GaN, if GaCl 3 and NH 3 entry temperature below about 850°C, the formation of undesired GaCl may 3 :NH 3 complex, which limits the GaCl 3 and NH 3 between the required direct reactions to form GaN. Another problem arises if the precursor gases are mixed prematurely before contact in the immediate vicinity of the substrate. Premature mixing of precursor gases can lead to unwanted gas phase reaction by-products...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14C23C16/00
CPCC30B25/14C23C16/45574C23C16/4557C23C16/45578Y10T137/8593
Inventor 尚塔尔·艾尔纳克里斯蒂安·J·韦尔克霍芬罗纳德·托马斯·小伯特伦埃德·林多丹尼斯·L·古德温
Owner SOITEC SA