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Structure for achieving wire bonding and packaging and production method thereof

A technology of wire bonding packaging and manufacturing method, which is applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as wire bonding failure, and achieve the effect of solving process problems.

Active Publication Date: 2010-11-10
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of this, the technical problem solved by the present invention is: the lower part of the Al RDL pad is a relatively soft re-passivation layer, so the problem of wire bonding failure is likely to occur in subsequent wire bonding packaging with gold wires

Method used

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  • Structure for achieving wire bonding and packaging and production method thereof
  • Structure for achieving wire bonding and packaging and production method thereof
  • Structure for achieving wire bonding and packaging and production method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art undoubtedly fall within the protection scope of the present invention.

[0034] The present invention has been described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagram showing the structure will not be partially enlarged according to the general scale, which should no...

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Abstract

The invention discloses a production method for realizing a wire bonding and packaging structure, which is applied in the procedure of producing a re-distribution layer pad (RDL pad). The method comprises the following steps: forming a first repassivation layer on a passivation layer; patterning the first repassivation layer, making an opening at the position where the RDL pad is needed to be produced to expose the passivation layer; forming the RDL pad on the exposed passivation layer; and forming a second repassivation layer on the patterned first repassivation layer and the RDL pad. The invention further discloses a structure for achieving wire bonding and packaging. In the invention, the structure and the production method are used, due to the support of the directly contacted passivation layer under the PDL pad, the subsequent wire bonding and packaging can be easily achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a structure for realizing wire bonding packaging and a manufacturing method thereof. Background technique [0002] At present, after the storage device completes the front-end process, in order to meet different application requirements, redistribution pads (RDL pads) need to be made to redistribute the terminal pads for connection with the terminal pads. In the prior art, gold (Au) is used as the RDL pad, because the gold wire is also used in wire bonding, and the gold wire is placed on the RDL pad, because the wire bonding is the contact between gold and gold, so It is easy to implement, but using gold as the material of the RDL pad is expensive and is not conducive to the development of semiconductor manufacturing processes. Therefore, aluminum is used as the RDL pad in the prior art, and the cross-sectional schematic diagram of a semiconductor device in wh...

Claims

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Application Information

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IPC IPC(8): H01L21/60H01L23/485
CPCH01L24/05H01L2224/02166
Inventor 江卢山梅娜章国伟
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP