Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device including through-electrode and method of manufacturing the same

A technology of through-electrode and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor device, electric solid-state device, etc., can solve problems such as insufficient formation of barrier metal and seed Cu, generation of voids, and deterioration of through-electrode reliability.

Inactive Publication Date: 2011-01-05
KK TOSHIBA
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Then, in order to form the through-hole electrode, when the barrier metal and seed crystal Cu are sputtered in the through-hole, and Cu is formed by electrolytic plating, if there is a large step difference between the electrode pad part and the oxide film part, the barrier metal And seed crystal Cu is not fully formed, resulting in voids when Cu is plated
In this way, if a void is generated between the electrode pads, there is a problem that the reliability of the through-electrode is deteriorated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device including through-electrode and method of manufacturing the same
  • Semiconductor device including through-electrode and method of manufacturing the same
  • Semiconductor device including through-electrode and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0046] First, a camera module according to a first embodiment of the present invention will be described.

[0047] figure 1 It is a sectional view showing the structure of the camera module of the first embodiment. On the first main surface of a silicon semiconductor substrate (imaging element chip) 10 on which an imaging element (not shown) is formed, a light-transmitting support substrate (transparent substrate), such as a glass substrate 12 , is formed via an adhesive 11 . On the glass substrate 12 , an IR (infrared ray) cut filter 14 is arranged via an adhesive 13 . Furthermore, a lens holder 17 including an imaging lens 16 is disposed on the IR cut filter 14 via an adhesive 15 .

[0048] Further, on the second main surface of the silicon substrate 10 opposite to the first main surface, external connection terminals (electrodes) such as solder balls 18 are formed. Around the silicon substrate 10 and the glass substrate 12, a light shielding and electromagnetic shielding...

no. 2 approach

[0093] Next, a camera module according to a second embodiment of the present invention will be described.

[0094] Figure 13 It is an enlarged cross-sectional view of a penetrating electrode formed on a silicon semiconductor substrate of the camera module according to the second embodiment and its vicinity.

[0095] In this second embodiment, an element isolation insulating film (STI) 22B is formed in the silicon semiconductor substrate 10 under the electrode pad 26B on which the penetrating electrode is formed. The STI 22B is arranged at a position corresponding to a space between the electrode pads 26B in a direction perpendicular to the first main surface of the silicon substrate 10 . The STI 22B is formed in the same pattern as or larger than the empty area between the electrode pads 26B.

[0096] By forming the STI 22B in the silicon substrate 10 under the empty area, the thickness of the interlayer insulating film (silicon oxide film) 25 in the empty area is lower tha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor device including through-electrode and a method of manufacturing the same. The semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent Application No. 2009-154009 filed on June 29, 2009, the priority of which is claimed, and the entire content of this Japanese Patent Application is cited in this application. technical field [0003] The present invention relates to a semiconductor device and a method of manufacturing the same, for example, to a solid-state imaging device using a through electrode. Background technique [0004] In recent years, along with the miniaturization of mobile phones, the demand for miniaturization of mounted camera modules has also increased. In order to meet this demand, application of through-electrode technology and high integration of sensor chips are being sought. [0005] For example, in a camera module, rewiring is performed on the back side of an imaging semiconductor element using through-hole electrodes, and solder ball terminals are formed, thereby making it possible to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485H01L27/146H01L21/768
CPCH01L21/76898H01L27/14618H01L23/481H01L27/14683H01L2224/02372H01L2224/05548H01L2224/13H01L2224/13022H01L2224/13024H01L2224/0401H01L2224/0392
Inventor 早崎裕子萩原健一郎
Owner KK TOSHIBA