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Flash memory bad block shielding method based on section

A sector and flash memory technology, applied in the field of sector-based flash memory bad block shielding, can solve problems such as capacity decline, and achieve the effect of expanding the use capacity

Active Publication Date: 2011-01-12
苏州国芯科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When there are many bad blocks in Flash, the capacity will drop significantly

Method used

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  • Flash memory bad block shielding method based on section
  • Flash memory bad block shielding method based on section
  • Flash memory bad block shielding method based on section

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] Embodiment: a kind of sector-based flash memory bad block shielding method comprises the following steps:

[0029] Step 1, scan each physical block of flash memory, obtain the sector state corresponding to each physical page in each physical block, this sector state represents the distribution and the number of valid sectors in the physical page in the physical page, and the physical block consists of at least one Each physical page is composed of at least one sector, and the sector address in the physical block is determined by the physical page number and the physical sector number;

[0030] Step 2. Synthesize the sector status of each physical page in the physical block to determine the sector mode of the physical block. The sector mode is determined in the following way: in the same block, a number of physical sectors located on different physical pages and with the same sector number are used as a column , set the columns with the same physical sector number and at...

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PUM

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Abstract

The invention discloses a flash memory bad block shielding method based on a section, comprising the following steps: scanning each physical block of a flash memory to obtain the corresponding section state of each physical page in each physical block; determining the section mode of the physical block, wherein the section mode represents the distribution situation and the number of practical effective sections; dividing the physical blocks with the same section mode in the same group; obtaining the virtual block number, the physical page number and the page virtual section offset of the grouping by the offset; according to the virtual block number of the grouping and a physical block numbering table, obtaining the physical block number accessed by an application layer; and according to the page virtual section offset and section mode of the physical block number, obtaining a page physical section offset corresponding to the page virtual section offset. The invention maps the physical layer existing in a bad section into a continuous linear storage medium so as to furthest expand the effective volume of the storage medium.

Description

technical field [0001] The invention relates to a sector-based flash memory bad block shielding method. Background technique [0002] Flash memory, as a storage medium, is widely used in the storage field due to its high cost performance. Due to the problem of the production process, the Flash supplier cannot guarantee that the chips shipped from the factory are free of defects, which requires the user to identify the defective storage area by himself during the application process and take corresponding measures. Since the large-capacity Flash is the smallest erasable unit with a block (the entire Flash is composed of several blocks, each block is composed of several pages, and each page is composed of several bytes), so generally, the defective memory Regions are also processed in blocks. [0003] However, this approach to management has flaws. As long as one page in a block is bad, the block is treated as a bad block. When there are many bad blocks in Flash, the capac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
Inventor 郑茳肖佐楠匡启和王廷平张文江
Owner 苏州国芯科技股份有限公司
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