Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash memory bad block shielding method based on section

A technology of sectors and flash memory, which is applied in the field of sector-based bad block shielding of flash memory, can solve problems such as capacity decline, and achieve the effect of expanding the use of capacity

Active Publication Date: 2012-07-04
苏州国芯科技股份有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When there are many bad blocks in Flash, the capacity will drop significantly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory bad block shielding method based on section
  • Flash memory bad block shielding method based on section
  • Flash memory bad block shielding method based on section

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] Embodiment: A sector-based flash memory bad block shielding method includes the following steps:

[0029] Step 1. Scan each physical block of the flash memory to obtain the corresponding sector status of each physical page in each physical block. The sector status represents the distribution and number of valid sectors in the physical page in the physical page. The physical block consists of at least one Physical page composition, each physical page is composed of at least one sector, the sector address in the physical block is determined by the physical page number and the physical sector number;

[0030] Step 2. Synthesize the sector status of each physical page in the physical block to determine the sector mode of the physical block. The method of determining the sector mode is: a number of physical sectors located in different physical pages and with the same sector number in the same block as a column , Set the column with the same physical sector number and at least on...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash memory bad block shielding method based on a section, comprising the following steps: scanning each physical block of a flash memory to obtain the corresponding section state of each physical page in each physical block; determining the section mode of the physical block, wherein the section mode represents the distribution situation and the number of practical effective sections; dividing the physical blocks with the same section mode in the same group; obtaining the virtual block number, the physical page number and the page virtual section offset of the grouping by the offset; according to the virtual block number of the grouping and a physical block numbering table, obtaining the physical block number accessed by an application layer; and according to the page virtual section offset and section mode of the physical block number, obtaining a page physical section offset corresponding to the page virtual section offset. The invention maps the physicallayer existing in a bad section into a continuous linear storage medium so as to furthest expand the effective volume of the storage medium.

Description

Technical field [0001] The invention relates to a sector-based flash memory bad block shielding method. Background technique [0002] As a storage medium, Flash has been widely used in the storage field due to its high cost performance. Due to production process problems, Flash suppliers cannot guarantee that the chips shipped out of the factory are free of defects. This requires users to identify defective storage areas during the application process and make corresponding treatments. Because the large-capacity Flash is the smallest erasable unit (the whole Flash is composed of several blocks, each block is composed of several pages, and each page is composed of several bytes), it is generally used for defective storage Districts are also processed in blocks. [0003] However, this management method has drawbacks. As long as one page in a block is bad, this block is treated as a bad block. When there are many bad blocks in Flash, the capacity will drop significantly. Therefor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
Inventor 郑茳肖佐楠匡启和王廷平张文江
Owner 苏州国芯科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com