Method for forming semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device formation, can solve problems such as the decline of the electrical performance of the device, and achieve the effect of improving the yield rate of the device and reducing the number of defects
Inactive Publication Date: 2013-04-17
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0005] In the existing formation process of the interlayer insulating film covering the surface of the interconnection wire, especially in the formation process of the top metal layer (Top Metal, TM) covering the interlayer insulation film, the interconnection wire of metal copper and the covering The thermal expansion coefficients of the interlayer insulating films of the interconnecting wires are different. After the formation of the interlayer insulating film covering the interconnecting wires, other high-temperature processes will be performed, so that the interconnecting wires cannot expand outward and have to expand upward to form a small hill. The bumps (Hillock) degrade the electrical performance of the device
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[0011] After a lot of labor, the inventor found that after the metal layer is formed in the existing process, there is stress in the metal layer; in the subsequent process, after the surface of the metal layer is covered with an insulating layer, the stress of the metal layer will follow Thickness increases; in the subsequent high-temperature process, the thermal expansion coefficient of the metal layer does not match that of the insulating layer, and the stress in the metal layer cannot expand outward, and has to expand upward to form hillock-shaped protrusions.
[0012] For this reason, the present invention provides a kind of advanced semiconductor device forming method, figure 1 It is a schematic flow chart of the method for forming a semiconductor device of the present invention, specifically comprising the following steps:
[0013] Step S101, providing a substrate, and a metal layer is formed on the surface of the substrate;
[0014] Step S102, performing stress relief ...
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Abstract
A method for forming a semiconductor device comprises the following steps: providing a substrate; withdrawing stress from a metal layer; forming an isolating layer on the surface of the metal layer; and forming an insulating structure on the surface of the isolating layer, wherein the metal layer is formed on the surface of the substrate. The method can avoid hillock from being formed on the metal layer and improve the yield of the device.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] In VLSI technology, silicon dioxide, which has thermal stability and moisture resistance, has always been the main insulating material used between metal interconnection lines, and metal aluminum is the main material of the metal layer of metal interconnection lines in chips. However, due to the miniaturization of components and the increase in integration, the number of metal layers in the circuit continues to increase, and the parasitic effects of resistance (R) and capacitance (C) in the metal interconnection structure have caused serious transmission delays (RC Delay), which becomes the main factor limiting the speed of signal transmission in the circuit in 130nm and more advanced technologies. [0003] Therefore, in terms of reducing the resistance of the metal layer, copper has been widely...
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IPC IPC(8): H01L21/768H01L21/321H01L23/532
Inventor 王琪牛孝昊
Owner SEMICON MFG INT (SHANGHAI) CORP