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Fatigue management system and method for hybrid nonvolatile solid state memory system

A non-volatile, solid-state storage technology, applied in memory systems, static memory, information storage, etc., can solve the problem that the solid-state disk 100 can no longer be used

Active Publication Date: 2014-11-19
MARVELL ASIA PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Once the write cycle life of the flash memory 104 has been exceeded, the controller 102 can no longer reliably store data in the flash memory 104, and the solid state disk 100 can no longer be used.

Method used

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  • Fatigue management system and method for hybrid nonvolatile solid state memory system
  • Fatigue management system and method for hybrid nonvolatile solid state memory system
  • Fatigue management system and method for hybrid nonvolatile solid state memory system

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Embodiment Construction

[0032] The following description is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or uses. For purposes of clarity, the same reference numbers will be used in the drawings to indicate similar components. As used herein, the phrase at least one of A, B, and C should be understood to mean a logical (A or B or C) by use of a non-exclusive logical or. It should be understood that steps within a method may be executed in different order without altering the principles of the present disclosure. As used herein, the term "based on" or "substantially based on" refers to a value that is a function of, proportional to, varies with, and / or related to another value value related. The value may also be a function of, proportional to, vary with, and / or related to one or more other values.

[0033] As used herein, the term module refers to an application-specific integrated circuit (ASIC), electronic circuit, processor (shared, dedicated, o...

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Abstract

A solid state memory system comprises a first nonvolatile semiconductor memory having a first write cycle lifetime and a first set of physical addresses, and a second nonvolatile semiconductor memory having a second write cycle lifetime and a second set of physical addresses. The first write cycle lifetime is greater than the second write cycle lifetime. The system further comprises a fatigue management module to generate a write frequency ranking for a plurality of logical addresses. The fatigue management module maps each of the plurality of logical addresses to a physical address of the first set of physical addresses or the second set of physical addresses based on the write frequency rankings.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of US Application No. 11 / 952,648, filed December 7, 2007, which claims the benefit of US Provisional Application No. 60 / 869,493, filed December 11, 2006. This application also claims priority to US Application No. 12 / 365,455, filed February 4, 2009, and US Provisional Application No. 61 / 032,774, filed February 29, 2008. The disclosure of the above application is incorporated herein by reference in its entirety. technical field [0003] This disclosure relates to solid-state memory, and more particularly, it relates to hybrid non-volatile solid-state memory. Background technique [0004] The background description provided herein is for the purpose of generally presenting the context of the disclosure. Aspects that are presently referred to as the inventor's work to the extent described in the Background section and that may not qualify as prior art at the time of filing are ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34
CPCG06F2212/7211G06F2212/1036G11C16/349G11C16/3495G06F12/0246G06F2212/7208
Inventor 潘塔斯·苏塔迪嘉
Owner MARVELL ASIA PTE LTD