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Preparation method of L10-FePt granular film

A l10-fept and thin film technology, applied in ion implantation plating, metal material coating process, coating, etc., to achieve the effects of small magnetic interaction, lower ordering temperature, and small grain size

Inactive Publication Date: 2013-01-02
JILIN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] It should be noted that although people 0 -FePt thin films have been studied quite extensively, but a lot of research work is still needed in terms of texture control, organization optimization, etc.

Method used

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  • Preparation method of L10-FePt granular film
  • Preparation method of L10-FePt granular film

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specific Embodiment approach 2

[0025] Specific Embodiment 2. This embodiment is a kind of L1 described in Specific Embodiment 1. 0 -The specific embodiment of the preparation method of FePt particle thin film:

[0026] 1. Substrate treatment: The substrate described in this embodiment is a Si (001) substrate, and the substrate is ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, dried and sent to a vacuum chamber;

[0027] 2. Deposition conditions: At room temperature, the ATC 1800-F multi-target magnetron sputtering system adopts DC co-sputtering, and the background vacuum of the sputtering system is better than 1.5×10 -4 Pa, the working pressure of Ar during sputtering is 4.5 mTorr, the substrate rotation rate is 20 r / min, the purity of Fe and Ag targets are both 99.95%, and FeAg nano film is obtained;

[0028] 3. Annealing treatment: The obtained FeAg thin film samples were annealed at 400 °C in a vacuum magnetic annealing furnace under 0 and 10 kOe magnetic fields respecti...

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Abstract

The invention discloses a preparation method of an L10-FePt granular film, relating to a method for preparing an L10-FePt granular film with high degree of order by preannealing in a magnetic field, which has the advantages of lowering the ordering temperature of a FePt granular film, promoting the growth of tissues of the L10-FePt granular film (001) and improving the magnetic property and comprises the following steps of: firstly, preparing a FeAg nano film on a substrate at room temperature by using a DC magnetic control sputtering method; secondly, placing the FeAg nano film prepared in the first step into the magnetic field and carrying out vacuum annealing to obtain an annealed FeAg nano film; and thirdly, depositing the annealed FeAg nano film obtained in the second step at room temperature by DC magnetic control sputtering to form a Pt layer, and then carrying out vacuum annealing without any magnetic field to obtain the L10-FePt / Ag film. With the method provided by the invention, the high-performance L10-FePt / Ag film with high degree of order, small crystallite size and small magnetic mutual effects among crystalline grains can be formed on any substrate.

Description

technical field [0001] The invention relates to the preparation of L1 with high (001) order degree by pre-annealing in a magnetic field 0 - Method for thin films of FePt particles. Background technique [0002] with L1 0 The FePt thin film with ordered structure has high magnetocrystalline anisotropy, large coercive force, large saturation magnetization, high Curie temperature and good chemical stability, which has attracted widespread attention at home and abroad, and has become a new type of magnetic storage. media research hotspots. L1 0 -FePt granular thin films have good comprehensive properties and can meet the needs of ultra-high-density magnetic recording for thermal stability, and are considered to be the most promising magnetic recording materials. [0003] FePt thin films prepared by deposition method at room temperature are usually disordered face-centered cubic (fcc) structure, therefore, the ordered face-centered tetragonal (fct) structure L1 is generally p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/16
Inventor 李海波刘梅张玉梅孟祥东陈芳慧
Owner JILIN NORMAL UNIV
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