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Method for reducing gate oxide film pinholes

A gate oxide film, oxide film technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of pinholes in the gate oxide film, and achieve the effect of reducing pinholes

Active Publication Date: 2011-06-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In particular, the thickness of the polysilicon electrode is thicker, and t

Method used

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  • Method for reducing gate oxide film pinholes
  • Method for reducing gate oxide film pinholes
  • Method for reducing gate oxide film pinholes

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Embodiment Construction

[0014] see Figure 7 As shown, since the crystal grains will increase with the increase of polysilicon thickness in the polysilicon gate growth process, the present invention adopts 500-3000 sccm, 2 / Ar, to grow a layer of oxide film about 5-10 Angstroms on the surface of polysilicon, so as to restrain the polysilicon crystal grains from continuing to grow. Then repeat the above process, that is, a small amount of low-concentration oxygen is introduced immediately after each layer of polysilicon is deposited, which can make the final polysilicon grain smaller and avoid pinholes in the subsequent wet process.

[0015] Figure 4 a is a photo of polysilicon gates formed by the method of the present invention under an atomic force microscope after doping activated recrystallization. Figure 4 b is a polysilicon gate film formed at one time, and the photo of the grain condition on the surface of polysilicon after doping activated recrystallization under the atomic force microscope...

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Abstract

The invention discloses a method for reducing gate oxide film pinholes. Layered deposition is adopted during the deposition of polysilicon grids, and oxygen is introduced among all layers of polysilicon grids to form oxide films on the surfaces of the polysilicon grids. By the method, the formation of the gate oxide film pinholes can be effectively resisted by controlling the grain sizes of polysilicon electrodes.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for reducing pinhole problems in gate oxide films. Background technique [0002] figure 1 It is the standard gate structure currently used. The polysilicon electrode on the gate oxide film is formed as a film during the growth process; after doping and activating the polysilicon electrode, the recrystallized grains are larger, such as figure 2 shown. In the subsequent wet process, the chemical solution is relatively easy to penetrate along the gap of the unit cell, and finally forms pinholes on the gate oxide film, such as image 3 shown. In particular, the thickness of the polysilicon electrode is relatively thick, and pinholes are more likely to appear in the gate oxide film with a long subsequent wet etching time. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a method for reducing th...

Claims

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Application Information

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IPC IPC(8): H01L21/285
Inventor 董颖
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP