Preparation method of zinc oxide nano linear array

Abstract

The invention discloses a preparation method of a zinc oxide nano linear array, belonging to the technical field of materials. The preparation method comprises the steps of: firstly, depositing a layer of metal film with controllable surface crystal grain radius on the surface of a substrate by adopting a film depositing process; then, floating the metal film on the surface of a growth solution prepared from a zinc nitrate solution and hexamethylene tetramine, which are equal in lolar weight, by adopting a mode that the surface of the metal film faces downwards; and standing under the condition with the temperature of 60-90 DEG C for growing of the zinc oxide nano linear array. By controlling the sizes of the surface crystal grains of the metal film, the zinc oxide nano linear arrays withdifferent growth densities can be acquired conveniently. Compared with the conventional hydro-thermal method for controlling the growth density of the zinc oxide nano linear array by using a growth solution, the preparation method is easier to realize the control of the growth density of the zinc oxide nano linear array, and the zinc oxide nano linear array with higher requirements on the densityprecision can be prepared at low temperature in a large area without addition of extra steps or cost.

Description

technical field [0001] The invention belongs to the technical field of materials and relates to a preparation method of zinc oxide nanowires. Background technique [0002] Zinc oxide nanomaterial is a typical wide-bandgap semiconductor material with direct bandgap. The bandgap width at room temperature is 3.37ev, and the exciton binding energy is as high as 60meV. It has luminescence properties from blue to ultraviolet. Higher optical gain can be obtained by making light-emitting devices, which has great application potential in light-emitting diodes, nano-lasers, etc. [0003] The existing methods for preparing ZnO nanowires include physical evaporation, laser deposition, chemical meteorological transport, hydrothermal method and so on. As a chemical method, the hydrothermal method has the advantages of low temperature and easy synthesis in the process of preparing ZnO nanowires. [0004] The density of zinc oxide nanowire arrays can be controlled by changing the concentr...

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Problems solved by technology

like figure 1 As shown, this method can control the density of ZnO nanowires through the empirical curve drawn, but there are two main problems in this method. One is that the growth of ZnO nanowire arrays is very sensitive to the solution concentration. When the solution concentration is slightly Any change will lead to a large change in the growth density of the zinc oxide nanowire array, which is difficult to ensure the repeatability of the growth of the zinc oxide nanowire array; the second is that there is no functional relationship between the growth density of the zinc oxide nanoarray and the solution concentration. When industrial applications have requirements for the density of zinc oxide nanowire arrays, a large number of experiments are required to find the value of the appropriate solution concentration.

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