Magnetron sputtering target

Abstract

The invention relates to coating equipment, in particular to a magnetron sputtering target, which comprises a target head, a bending corrugated pipe assembly, a target supporting rod, a target support, a manual spiral lifting assembly, a connector assembly, a driver and a target baffle assembly, wherein the target supporting rod is arranged on the target support in a vertical reciprocating way; one end of the target supporting rod positioned above the target support is connected with the target head through the bending corrugated pipe assembly; the target head can be bent relative to the target supporting rod through the bending corrugated pipe assembly; the target supporting rod positioned below the target support is connected with the manual spiral lifting assembly arranged on the target support; the driver is arranged on the target support, and the output end of the driver is connected with the target baffle assembly which can rotate relative to the target support and also can vertically reciprocate along the target supporting rod; and the other end of the target supporting rod positioned below the target support is provided with the connector assembly connected with a power supply. The target head is bent under the driving of the bending corrugated pipe assembly, so that a piece of magnetron equipment implements various coating processes, and the processing cost is reduced.

Description

technical field [0001] The invention relates to coating equipment, in particular to a magnetron sputtering target. Background technique [0002] At present, in the field of coating film preparation in China, it is often necessary to make alloy films of two, three or more materials, and the mechanical design needs to allow the target head to be tilted for co-sputtering. Such as figure 1 As shown in the figure, A is the position of the substrate, and the center line of the magnetron target is installed at the B position. The existing magnetron target is to make the flange connected to the magnetron target on the vacuum chamber and the nozzle tilt at an angle α, and the magnetron target is tilted Installation, the distance D between the target head and the position A of the substrate is a fixed value. However, the existing magnetron targets have the following disadvantages: [0003] 1. The original co-sputtering scheme needs to process oblique holes on the large flange of th...

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Problems solved by technology

[0003] 1. The original co-sputtering scheme needs to process oblique holes on the large flange of the vacuum chamber, which is troublesome to process;

[0004] 2. Since the magnetron target is installed obliquely and the target head cannot be bent, the target head can neither adjust the bending angle nor sputter vertically upward. The magnetron target can only realize the co-sputtering function, and cannot meet the straight sputtering function. Relatively simple

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