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System and method for manufacturing thin film electrical devices

A technology for electronic devices and thin films, which is applied in the field of systems for processing a large number of thin film electronic devices, and can solve complex problems

Inactive Publication Date: 2011-06-29
UNITED SOLAR OVONIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In an application such as transitioning from atmospheric pressure to a vacuum deposition chamber, multiple seals may be used for high-volume pumping devices to maintain the vacuum pressure region, which is a complex and expensive solution

Method used

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  • System and method for manufacturing thin film electrical devices
  • System and method for manufacturing thin film electrical devices
  • System and method for manufacturing thin film electrical devices

Examples

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Embodiment Construction

[0020] Disclosed herein is an apparatus for depositing an electrically functional material on a material substrate or web of material employed in an embodiment of a processing system for processing thin film electronic devices. Thin film electronic devices contemplated to be processed by embodiments of the processing system include inorganic and organic semiconductor devices and circuits, organic photovoltaic devices, inorganic films, inorganic inks, and the like.

[0021] It is further contemplated that embodiments of the processing system are configured for processing thin film electronic devices having a multilayer intermediate structure on which electronic device portions are deposited, wherein the intermediate structure is configured to minimize or prevent passage of water vapor and oxygen through the TFED. The substrate diffuses and degrades the electrical part. In addition to forming the intermediate structure, the processing system may also be configured to form at lea...

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Abstract

A system for manufacturing a thin film electrical device is provided in accordance with an exemplary embodiment. The system includes a chamber and a gas gate. The chamber includes accumulating apparatus therein configured for gathering a portion of the substrate within the chamber. The gas gate provides fluid communication between a pressure region of the chamber and a second pressure region.

Description

[0001] government investment [0002] This invention was made at least in part with support from the US Government's National Institute of Standards and Technology (NIST) under Grant No. 70NANB3H3030. The government may have an interest in this invention. technical field [0003] The present invention relates generally to systems for processing large quantities of thin film electronic devices, and in particular to processing systems having one or more deposition processes. Background technique [0004] It should be understood that the present disclosure is applicable to thin film electronic devices, such as inorganic and organic semiconductor devices and circuits, organic photovoltaic devices, inorganic films, inorganic inks, and the like. It is further envisioned that the present disclosure is applicable to thin film electronic devices (TFEDs) having a multilayer intermediate structure on which portions of the electronic device are deposited, wherein the intermediate stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335
CPCC23C14/564C23C14/562H01L21/67173H01L21/6776
Inventor V·肯尼拉G·乌佐尼B·多特
Owner UNITED SOLAR OVONIC