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A flash memory circuit

A circuit and flash memory technology, applied in the direction of logic circuit connection/interface layout, etc., can solve the problems of MOS tube damage, no better solution, leakage, etc., and achieve the effect of reducing leakage current

Active Publication Date: 2016-07-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, in the above-mentioned level shift circuit, when each MOS tube is in the cut-off state, a relatively serious leakage phenomenon often occurs, thereby causing damage to the MOS tube.
At present, there is no better solution for this problem in the existing technology

Method used

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Embodiment Construction

[0026] The inventors found that in the existing level shift circuit of the row decoding circuit, when each MOS transistor is in the cut-off state, a relatively serious leakage phenomenon often occurs, so that the MOS transistor is damaged by high leakage current. For example, refer to figure 2 In the level shift circuit shown, when the input signal at the input terminal IN1 is a low-level signal, the Vgs of the pull-down MOS transistor 103 is 0V, but leakage current still flows through the pull-down MOS transistor 103 due to subthreshold leakage. For another example, when the input signal of the input terminal IN1 is a high-level signal, the pull-up MOS transistor 101 is turned off, but due to the subthreshold leakage of the pull-up MOS transistor, a leakage current will still flow through the pull-up MOS transistor 101.

[0027] Therefore, in view of the above problems, the inventor has changed the connection mode of the MOS transistor in the existing level shift circuit, c...

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PUM

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Abstract

A flash memory circuit at least includes a peripheral circuit and a row decoding circuit, wherein the row decoding circuit includes a level shift circuit, a word line selection circuit and a drive latch circuit, wherein the level shift circuit includes: a first upper pull MOS tube and the second pull-up MOS tube, the first pull-down MOS tube and the second pull-down MOS tube and the first inverter, by increasing the source voltage of the first pull-down MOS tube and the second pull-down MOS tube, Make the source voltage greater than the gate voltage of the first pull-down MOS transistor and the second pull-down MOS transistor; simultaneously increase the substrate voltage of the first pull-up MOS transistor and the second pull-up MOS transistor, so that the substrate The voltage is greater than the source voltages of the first pull-up MOS transistor and the second pull-up MOS transistor. The invention improves the level shift circuit in the existing flash memory circuit, so that when the flash memory system is in standby, the leakage current flowing through the MOS tube can be reduced, so that the MOS tube will not be damaged by high leakage current.

Description

technical field [0001] The invention relates to the field of flash memory design circuits, in particular to a flash memory circuit. Background technique [0002] Such as figure 1 As shown, the existing flash memory 1 mainly includes a peripheral circuit 11 , a row decoding circuit 12 , a column decoding circuit 13 and a storage array 14 . Wherein, the peripheral circuit 11 is connected to the row decoding circuit 12 and the column decoding circuit 13 respectively, and the row decoding circuit 12 and the column decoding circuit 13 are connected to a memory array 14 . Further, the row decoding circuit 12 also includes a level shift circuit 121, a word line selection circuit 122 and a drive latch circuit 123, wherein the level shift circuit 121 is in phase with the word line selection circuit 122 of the next stage. The word line selection circuit 122 is connected to the drive latch circuit 123 . Specifically, the level shift circuit is similar to a voltage switch, which outp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0175
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP