LED crystal plate with high light-emitting efficiency and manufacturing method thereof
A technology of wafer manufacturing and light efficiency, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high production cost, complicated manufacturing process, unsuitable for mass industrial production, etc., to improve service life, avoid total reflection, Avoid the effect of converting light energy into heat energy
Inactive Publication Date: 2012-12-26
GUANGDONG TONGFANG ILLUMINATIONS CO LTD
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However, the above-mentioned manufacturing process is relatively complicated, and the production cost is relatively high, which is not suitable for the current mass industrial production requirements.
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[0029] Refer to attached figure 1 , figure 2 , image 3 , Figure 4 , Figure 5As mentioned above, the present invention provides a LED chip 30 with high light extraction efficiency, including a substrate 8, a semiconductor layer 20 formed on the front surface of the substrate 8, and the semiconductor layer 20 includes an N-type semiconductor layer formed on the front surface of the substrate 8 in sequence 6. The light-emitting layer 5 and the P-type semiconductor layer 2, the substrate 8 is in the shape of an inverted terrace, and the angle θ formed between the side of the inverted terrace substrate 23 and the vertical direction is 30-45°, that is, the inverted terrace The angle β formed between the side of the substrate 23 and the horizontal plane is 45° to 60°, the semiconductor layer 20 is arranged in an inverted terrace shape, and the angle α formed between the side of the inverted terrace semiconductor layer 17 and the front surface of the substrate 8 It is 50-70°, ...
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The invention discloses a light-emitting diode (LED) with high light-emitting efficiency and a manufacturing method thereof. The LED crystal plate comprises a substrate, and a semiconductor layer formed on the right side of the substrate, wherein the semiconductor layer comprises an N-type semiconductor layer, a luminescent layer and a P-type semiconductor layer which are formed on the right side of the substrate sequentially. The LED crystal plate is characterized in that the substrate is in an inverted terrace shape, and the side edge of the inverted terrace substrate forms an included angle of between 30 and 45 degrees with the vertical direction; the semiconductor layer is in the inverted terrace shape, and the side edge of the inverted terrace semiconductor layer forms an included angle of between 50 and 70 degrees with the right side of the substrate; and the superficial area of the bottom of the semiconductor layer is less than that of the right side of the substrate. By the arrangement, the light-emitting area of the LED crystal plate can be increased, the probability of total reflection of light in the LED crystal plate is reduced, the light-emitting efficiency of the LED crystal plate is improved, the light is exported from the LED crystal plate to the greatest extent, and the service life of the LED crystal plate is greatly prolonged simultaneously.
Description
【Technical field】 [0001] The invention relates to an LED chip, in particular to an LED chip with high light extraction efficiency and a manufacturing method thereof. 【Background technique】 [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. [0003] In order to obtain high-brightness LEDs, the key is to improve the internal quantum efficiency and external quantum efficiency of the device. At present, the light extraction efficiency of the wafer is the main factor limiting the external quantum efficiency of the device. The main reason is that the refractive index difference between the substrate material,...
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IPC IPC(8): H01L33/20H01L33/46H01L33/00
Inventor 樊邦扬叶国光梁伏波杨小东曹东兴
Owner GUANGDONG TONGFANG ILLUMINATIONS CO LTD