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Oxide resistor storage device and preparation method thereof

A technology of resistive storage and oxide, applied in electrical components and other directions, can solve the problems of unsatisfactory performance such as resistance change stability, cycle endurance resistance state retention characteristics, etc., to enhance data retention characteristics, improve reliability characteristics, and reliable performance. Effect

Active Publication Date: 2013-04-17
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the resistive switching stability, cycle durability, and resistance state retention characteristics of oxide resistive memory devices during cyclic transitions between high-resistance states and low-resistance states are not ideal, and cannot meet the needs of practical applications.

Method used

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  • Oxide resistor storage device and preparation method thereof
  • Oxide resistor storage device and preparation method thereof
  • Oxide resistor storage device and preparation method thereof

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Embodiment Construction

[0027] The specific embodiments of the present invention will be described in further detail below in conjunction with the drawings and embodiments. The following examples are used to illustrate the present invention, but not to limit the scope of the present invention.

[0028] Such as figure 1 As shown, the present invention provides an oxide resistive memory device, including a substrate 1, a bottom electrode 2 on the substrate 1, an oxide control layer 3 on the bottom electrode 2, and an oxide control layer 3 on the oxide control layer 3. The oxide resistive layer 4, and the top electrode 5 on the oxide resistive layer. Select material SiO for substrate 1 2 / Si, Al 2 O 3 , Borosilicate glass or quartz glass. The top electrode 5 is made of thin film materials of platinum / titanium (Pt / Ti), gold / titanium (Au / Ti), titanium (Ti), tungsten (W), tantalum (Ta), TiN, TaN, niobium-doped strontium titanate Made of any kind. The bottom electrode 2 is made of thin film materials of pla...

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Abstract

The invention discloses an oxide resistor storage device, which comprises a substrate, a bottom electrode positioned on the substrate, an oxide control layer positioned on the bottom electrode, an oxide resistance change layer positioned on the oxide control layer, and a top electrode positioned on the oxide resistance change layer. The device is simple in preparation process and reliable in performance, the circulating durability of the resistance change of an oxide resistance change storage is improved and the data retention performance is improved.

Description

Technical field [0001] The present invention relates to the technical field of non-volatile storage devices, in particular to an oxide resistance storage device and a preparation method thereof. Background technique [0002] Non-volatile memory has the advantage of data retention when power is off, and is one of the current research hotspots in storage technology. However, today's mainstream non-volatile memory—flash memory (flash) has problems such as high operating voltage, slow speed, and poor endurance. Resistance Random Access Memory (RRAM) has shown advantages such as simple structure, fast working speed, high storage density and good compatibility with CMOS technology, and is one of the important candidates for a new generation of non-volatile semiconductor memory. The basic memory cell of RRAM is a metal-insulator-metal (MIM) structure resistor. By means of voltage or current pulses, the resistance of the MIM structure can be switched between high and low resistance sta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 刘力锋高滨陈冰张飞飞李博洋于迪陈沅沙康晋锋韩汝琦
Owner PEKING UNIV
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