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Discontinuous/non-uniform metal cap structure and process for interconnect integration

An interconnect structure, discontinuous technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of corrosion of metal caps and high process costs

Inactive Publication Date: 2011-08-31
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While this prior art recessed process provides a metal cap only on the surface of the recessed conductive material, such a process is problematic due to the high associated process costs
[0010] It is also worth mentioning that metal caps may corrode during cleaning in dilute hydrofluoric acid (typically used to clean the surface of interconnect dielectric materials)

Method used

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  • Discontinuous/non-uniform metal cap structure and process for interconnect integration
  • Discontinuous/non-uniform metal cap structure and process for interconnect integration
  • Discontinuous/non-uniform metal cap structure and process for interconnect integration

Examples

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Embodiment Construction

[0033]The present invention provides an interconnection structure with improved resistance to electromigration (EM) without degrading time-dependent dielectric breakdown reliability and methods of forming the same, and will now be described in detail with reference to the following discussion and accompanying drawings of this application. Note that the drawings in this application are for illustration purposes only and, therefore, these drawings are not drawn to scale.

[0034] In the following description, numerous specific details are set forth, such as specific structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the invention. It will be apparent, however, to one of ordinary skill that the present invention may be practiced without the above specific details. In other instances, well-known structures or processing steps have not been shown in order to avoid obscuring the present invention.

[0035]...

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Abstract

An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the upper surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.

Description

technical field [0001] The present invention relates to semiconductor interconnect structures and methods of manufacturing the same. More particularly, the present invention relates to semiconductor interconnect structures having improved resistance to electromigration (EM) without degrading time-dependent dielectric breakdown reliability. Background technique [0002] In general, a semiconductor device includes a plurality of circuits formed on an integrated circuit (IC) fabricated on a semiconductor substrate. Complex signal path networks are typically routed to connect circuit elements distributed across the surface of the substrate. Efficient routing of these signals on the device requires the formation of multilevel or multilayer schemes, such as single damascene or dual damascene wiring structures. The wiring structures typically include copper (Cu) because Cu-based interconnects carry signals at a higher speed than aluminum (Al)-based interconnects between the large...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/70H01L21/00
CPCH01L21/76865H01L21/02362H01L21/76868H01L23/53223H01L23/53266H01L23/5283H01L23/53252H01L23/53238H01L23/5329H01L21/76849H01L2924/0002H01L2924/00H01L21/28H01L21/768
Inventor L·M·吉纳克C·胡S·米塔尔C·杨
Owner INT BUSINESS MASCH CORP
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