Discontinuous/non-uniform metal cap structure and process for interconnect integration
An interconnect structure, discontinuous technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of corrosion of metal caps and high process costs
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[0033]The present invention provides an interconnection structure with improved resistance to electromigration (EM) without degrading time-dependent dielectric breakdown reliability and methods of forming the same, and will now be described in detail with reference to the following discussion and accompanying drawings of this application. Note that the drawings in this application are for illustration purposes only and, therefore, these drawings are not drawn to scale.
[0034] In the following description, numerous specific details are set forth, such as specific structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the invention. It will be apparent, however, to one of ordinary skill that the present invention may be practiced without the above specific details. In other instances, well-known structures or processing steps have not been shown in order to avoid obscuring the present invention.
[0035]...
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