Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method of fabricating semiconductor device

A technology of a semiconductor and a manufacturing method, applied in the field of semiconductor components and their manufacturing, can solve the problems of rapid energy consumption of complementary metal oxide transistor components and the like

Active Publication Date: 2014-05-14
TAIWAN SEMICON MFG CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the scaling of complementary metal oxide transistor devices (CMOS) encounters the challenge of rapid energy consumption

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of fabricating semiconductor device
  • Semiconductor device and method of fabricating semiconductor device
  • Semiconductor device and method of fabricating semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] A number of different embodiments or examples are provided below to implement the features of the various embodiments of the invention. The following will briefly describe the structure and arrangement of specific embodiments. Of course, the following description is only an example, not intended to limit the present invention. For example, a statement that a second element is formed "over" or "over" a first element may include embodiments where the first element and the second element are in direct contact, but also include an additional element formed between the first element and the second element. An embodiment in which the first element and the second element are not in direct contact between the second element. In addition, the present invention may have repeated component symbols in each example, but the above repetition is only used to briefly and clearly describe the present invention, and does not mean that there is a necessary relationship between the various...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method includes providing a semiconductor substrate having an active region and forming an isolation structure to isolate the active region. First and second gate structures are formed over the active region. First and second doped regions are formed within the active region of the substrate, the first doped region has a first conductivity type, the second doped region has the second conductivity type. The first and second gate structures are interposed between the first and second doped regions.

Description

technical field [0001] The invention relates to an integrated circuit and a manufacturing method thereof, in particular to a semiconductor element and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Improvements in integrated circuit (IC) material technology have produced several generations of integrated circuits, each generation more complex than the previous generation. However, the above-mentioned developments all make the process and manufacture of ICs more complicated. Therefore, corresponding progress is required in IC processes to realize advanced integrated circuits. [0003] During the development of integrated circuits, functional density (ie, the number of interconnected elements per chip area) has increased while geometric size (ie, the components or lines that can be fabricated using semiconductor processes) has decreased. The shrinking process generally benefits through...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/40H01L21/336
CPCH01L21/823807H01L29/423H01L29/7391H01L29/66484
Inventor 朱鸣张立伟庄学理
Owner TAIWAN SEMICON MFG CO LTD