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Magnetic control sputtering apparatus and sputtering method

A magnetron sputtering device and magnet technology, applied in sputtering plating, ion implantation plating, coating, etc., can solve the problems of complexity, large magnet unit 10, high manufacturing cost, etc., and achieve the effect of reducing manufacturing cost

Inactive Publication Date: 2011-09-28
CANON ANELVA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent large-scale sputtering devices such as substrates with a size exceeding 1 m, the magnet unit 10 is also large and heavy, so that the mechanism for moving the magnet unit 10 to the target side becomes large and complicated, and there are difficulties in device manufacturing. The problem of high cost

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  • Magnetic control sputtering apparatus and sputtering method
  • Magnetic control sputtering apparatus and sputtering method
  • Magnetic control sputtering apparatus and sputtering method

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no. 1 Embodiment approach

[0042] Next, a magnetron sputtering apparatus according to a first embodiment of the present invention will be described with reference to the drawings. figure 1 The schematic structure of the magnetron sputtering apparatus concerning this embodiment is shown in . A substrate 2 is placed on a substrate rack 5 in the cavity 1 . The chamber 1 is evacuated to a vacuum by an exhaust pump not shown, and a process gas such as Ar gas is supplied through a gas pipe not shown to form a predetermined pressure.

[0043] The target 3 is disposed above and facing the substrate 2 . The cathode 4 enables the target 3 to be mounted on the mounting surface, and the cathode 4 is installed in the cavity 1 through the insulator 6 .

[0044] In this embodiment, an example is shown in which the rear surface side of the cathode 4 where the target 3 can be mounted is exposed to the air. The cathode 4 is connected to an unillustrated DC power supply. On the back side of the cathode 4, a magnet un...

no. 2 Embodiment approach

[0065] Next, a second embodiment of the present invention will be described. exist Figure 7A The inner magnet 11 and the outer magnet 12 of the magnet unit 10 shown have magnets 15 made of ferromagnets such as iron and SUS430 respectively connected to the magnetic poles on the opposite side to the target 3 by adhesive or the like. A magnet 15 connected to the inner magnet 11 and the outer magnet 12 is connected into the magnetic circuit via the yoke 14 .

[0066] The yoke 14 is not fixed by an adhesive or the like, but is attached only by the attraction force (magnetic force) of the magnets (the inner magnet 11 and the outer magnet 12 ), so it can be removed. There is a non-magnetic body 13 between the inner magnet 11 and the outer magnet 12, and the magnet 15 and the non-magnetic body 13 are fixed by an adhesive, bolts, or the like.

[0067] The structure of the magnet unit 10 without the yoke 14 is in Figure 7B shown in . Since the magnet 15 and the non-magnet 13 are f...

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Abstract

The invention provides a magnetic control sputtering apparatus and a sputtering method. The magnet unit of the magnetic control sputtering apparatus comprises inner side magnets, outer side magnets, a non-magnet fixing the side magnets and a magnet yoke which connects the magnetic poles of the inner side and the outer side magnets. The magnet yoke has a shape of plate and is divided into a plurality of magnet yokes by a surface orthogonal to the outer side magnets arranged in a rectangular shape in a length direction, and each divided magent yoke can be replaced.

Description

technical field [0001] The present invention relates to a magnetron sputtering device and a sputtering method. Background technique [0002] As a method of forming a thin film on a substrate for a solar cell, a semiconductor wafer, or the like, there is a sputtering method. In particular, a magnetron sputtering apparatus in which a magnet is disposed on the back side of a cathode on which a target is mounted is excellent in stability of film formation and easy to increase the size of the target, and thus is widely used. In order to improve productivity, attempts have been made to increase the number of substrates that can be produced from one target by making the etching depth of the target as uniform as possible. In addition, in order to improve the uniformity of film thickness distribution on the substrate, the erosion depth shape is also controlled to a desired shape. [0003] In this way, the erosion depth shape of the control target is almost the same as the plasma de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/3407C23C14/35C23C14/52H01J37/3408H01J37/3414H01J37/3455
Inventor 佐佐木雅夫
Owner CANON ANELVA CORP
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