Rotating window piece apparatus used for laser processing

Abstract

The invention, which belongs to the semiconductor processing technology field, discloses a rotating window piece apparatus used for laser processing. The window piece of a shielding can is fixed on one side of a shielding can support component. The shielding can support component is fixed on a top of an annular wall of the shielding can support component. The annular wall of the shielding can support component is supported on an outer periphery wall of a heat insulation material layer of a heater by a bearing part. A wafer is placed on a heating plate bench. By using the rotating window piece structure, a high temperature part which is on the heating plate bench can be isolated from heat influence and disturbance caused by surrounding environment and other equipment parts. Because a transparent window piece is used, a technology effect of laser to the wafer is not isolated. The rotating window piece is adopted so as to reduce a processing difficulty of the window piece. Optical characteristics of the window piece can be accurately controlled in a small size range. Formed laser beams are not affected by an extra adverse influence caused by nonuniform window piece characteristics. Stabilization of technology effects can be guaranteed.

Description

technical field [0001] The invention belongs to the scope of semiconductor manufacturing equipment, in particular to a rotating window device for laser processing. Specifically, in the deep ultraviolet laser annealing equipment in the manufacturing process of semiconductor devices, windows are used to effectively isolate the influence of heat on low-temperature components. The size reduces the difficulty of processing and manufacturing the isolation cover structure (especially the transparent window). Background technique [0002] With the continuous shrinking of the feature size of CMOS devices, the process node has entered 32nm, 22nm, etc. At this time, it is required to produce source and drain regions with ultra-shallow junction structures. For ultra-shallow junction sources and drains, low-energy ion implantation is generally used to form ultra-shallow doping. In the link of impurity activation, the currently accepted process is laser annealing with a wavelength of dee...

AI Technical Summary

Problems solved by technology

Usually, there are very strict requirements for the material texture, flatness, thickness, optical performance, etc. of the window, and it is actually very difficult to make a large-sized window with various strict processing requirements.

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