Light emitting diode and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light output efficiency and poor electrode stability of light-emitting diodes, and achieve the goal of improving light output efficiency, improving stability, and increasing current injection density Effect
Inactive Publication Date: 2013-05-29
EPILIGHT TECH
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Problems solved by technology
[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a light-emitting diode and its manufacturing method to solve the problems of low light extraction efficiency and poor electrode stability of the light-emitting diode in the prior art.
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[0014] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.
[0015] It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered. At the same time, terms such as "upper s...
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The invention provides a light emitting diode and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: growing a buffer layer and an epitaxial layer sequentially on a semiconductor substrate by utilizing a metal organic chemical vapor phase deposition technology, wherein the epitaxial layer comprises an N-GaN layer, a quantum well, a P-GaN layer and a polarity inversion layer grown on the P-GaN layer; then protecting a region in which a P electrode is to be manufactured by utilizing a mask technology; corroding the polarity inversion layer out of theP electrode region of a chip until the P-GaN layer; removing the mask layer and forming an epitaxial structure with electric current block; then manufacturing a transparent electric conducting layer,the P electrode and an N electrode; and forming a chip with an electric current block layer structure. The light emitting diode manufactured by the method has the advantages of improved light emitting efficiency and reliable electrode stability.
Description
technical field [0001] The invention relates to a light emitting diode and a manufacturing method thereof, in particular to a light emitting diode with a current blocking layer and a manufacturing method thereof. Background technique [0002] Light emitting diodes (light emitting diodes, referred to as LEDs) have been widely used in display backlight modules, communications, computers, transportation, etc. Consumer markets such as signs and toys, but due to the problem of insufficient brightness, it has not been widely used in the lighting market. In order to solve the problem of insufficient brightness of light-emitting diodes, people in the industry are constantly looking for ways to improve the brightness of light. [0003] The usual light-emitting diodes are sequentially stacked on a substrate such as sapphire with an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, a transparent conductive layer, a metal N electrode bonded to the N-type s...
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IPC IPC(8): H01L33/00H01L33/14
Inventor 张楠周健华朱广敏郝茂盛
Owner EPILIGHT TECH