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Data reading method for flash memory

A technology of memory and data, applied in the field of data storage devices

Active Publication Date: 2014-12-17
SILICON MOTION INC (CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, how to select the correct read data value from a plurality of different read data values ​​generated according to a plurality of different read voltages is a problem.

Method used

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  • Data reading method for flash memory
  • Data reading method for flash memory
  • Data reading method for flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0052] Such as figure 2 Shown is a schematic diagram of a block (block) 200 for storing data in the flash memory according to the present invention. The data block 200 includes multiple pages (pages) 201˜20K for storing data, and each page can store multiple data sectors (sectors). In this embodiment, the size of each data segment is 512 bytes, and one page of the data block 200 can store 4 data segments. Generally speaking, in order to reduce errors generated during data storage, before the data segment is stored in the flash memory, the controller of the flash memory will encode an error correction code (Errorcorrectioncode, ECC) according to the data segment in advance, and When storing the data segment, store the corresponding error correction code in the flash memory. For example, page 201 stores four data segments 201a, 201b, 201c, and 201d, and each data segment 201a, 201b, 201c, and 201d includes a corresponding error correction code. In addition, in order to find ...

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Abstract

The invention relates to a data reading method of a flash memory. First, the flash memory is read to obtain an original data and an original error correction code. Then, the error bit of the original data is corrected according to the original error correction code. When the error bit of the original data cannot be corrected, predetermined information corresponding to the original data is read from the flash memory to obtain correction information. Then, modify the original data according to the difference between the calibration information and the predetermined information to generate a modification data. Then, the original error correction code is modified according to the difference between the correction information and the predetermined information to generate a modified error correction code. Then, the error bit of the modified data is corrected according to the modified error correction code to obtain an output data for sending to the host.

Description

technical field [0001] The invention relates to a data storage device, more specifically, to a data reading method of a flash memory. Background technique [0002] Flash memory (flash memory) is a non-volatile memory, that is, when the flash memory does not receive power, the data stored in the flash memory will not disappear due to power loss, so the flash memory It is widely used in portable devices with limited power for storing data. The flash memory includes multiple memory cells, and each memory cell can store 2N potentials. For example, a flash memory that can store two potentials per memory cell is called a single-level cell (SLC) flash memory, and a flash memory that can store four potentials per memory cell is called a multi-level cell. A multilevel cell (MLC) flash memory, and a flash memory in which each memory cell can store 8 potentials is called a triple level cell (TLC) flash memory. [0003] When the host intends to read data from the flash memory, the fl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/12
Inventor 黄千庭
Owner SILICON MOTION INC (CN)