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Photoelectrochemical cell and energy system using same

A chemical element and photoelectric technology, applied in the field of energy systems and photoelectrochemical elements, can solve the problems of difficult movement and low Fermi energy level, and achieve the effect of effectively supplying electricity and improving quantum efficiency

Inactive Publication Date: 2013-12-11
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when considering the Fermi level (vacuum reference value) of each material and paying attention to the joint part, the joint part of CdS (-5.0eV) and ZnS (-5.4eV), ZnS (-5.4eV) The junction with Pt (-5.7eV) has a low Fermi level relative to the direction of electron movement (from CdS to ZnS, and then from ZnS to Pt), so a Schottky barrier occurs
Therefore, although electrons move along the gradient of the band gap in this structure, it is difficult to move smoothly

Method used

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  • Photoelectrochemical cell and energy system using same
  • Photoelectrochemical cell and energy system using same
  • Photoelectrochemical cell and energy system using same

Examples

Experimental program
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Effect test

Embodiment approach 1

[0080] use Figure 1 to Figure 3 The structure of the photoelectrochemical element of Embodiment 1 of the present invention will be described. figure 1 It is a schematic diagram which shows the structure of the photoelectrochemical element of this embodiment. figure 2 It is a schematic diagram showing the energy band structure before the conductor constituting the semiconductor electrode, the first n-type semiconductor layer, and the second n-type semiconductor layer are joined in the photoelectrochemical element of the present embodiment. image 3 It is a schematic diagram showing the energy band structure after the conductor constituting the semiconductor electrode, the first n-type semiconductor layer, and the second n-type semiconductor layer are joined in the photoelectrochemical element of the present embodiment. exist figure 2 and image 3 Among them, the vertical axis represents the energy level (unit: eV) based on the vacuum level.

[0081] like figure 1 As sho...

Embodiment approach 2

[0174] use Figure 18 to Figure 20 The structure of the photoelectrochemical element of Embodiment 2 of the present invention will be described. Figure 18 It is a schematic diagram which shows the structure of the photoelectrochemical element of this embodiment. Figure 19 It is a schematic diagram showing the energy band structure before the conductor constituting the semiconductor electrode, the first p-type semiconductor layer, and the second p-type semiconductor layer are joined in the photoelectrochemical element of the present embodiment. Figure 20 It is a schematic diagram showing the energy band structure after the conductor constituting the semiconductor electrode, the first p-type semiconductor layer, and the second p-type semiconductor layer are joined in the photoelectrochemical element of the present embodiment.

[0175] like Figure 18 As shown, in the photoelectrochemical element 200 of the present embodiment, although the structure of the semiconductor elec...

Embodiment approach 3

[0257] use Figure 35 The structure of the photoelectrochemical element of Embodiment 3 of the present invention will be described. Figure 35 It is a schematic diagram which shows the structure of the photoelectrochemical element of this embodiment.

[0258] In the photoelectrochemical element 300 of the present embodiment, the semiconductor electrode 320 is composed of a substrate 321 , a first n-type semiconductor layer 322 arranged on the substrate 321 , a second n-type semiconductor layer 323 arranged on the first n-type semiconductor layer 322 , and The conductor 324 is constituted. On the other hand, the opposite pole 330 is arranged on the conductor 324 (the surface of the conductor 324 opposite to the surface on which the first n-type semiconductor layer 322 is arranged). In addition, the structures of the substrate 321 , the first n-type semiconductor layer 322 , the second n-type semiconductor layer 323 and the conductor 324 are respectively different from those o...

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Abstract

A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a substrate (121), a first n-type semiconductor layer (122) disposed on the substrate (121), and a second n-type semiconductor layer (123) and a conductor (124) disposed apart from each other on the first n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (124); an electrolyte (140) in contact with surfaces of the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). In the semiconductor electrode (120), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (124) is higher than the Fermi level of the first n-type semiconductor layer (122). The photoelectrochemical cell (100) generates hydrogen by irradiation of the second n-type semiconductor layer (123) with light.

Description

technical field [0001] The present invention relates to a photoelectrochemical element for decomposing water by light irradiation and an energy system using the same. Background technique [0002] Conventionally, techniques have been known in which water is decomposed to obtain hydrogen and oxygen by irradiating a semiconductor material that functions as a photocatalyst with light to obtain hydrogen and oxygen (for example, see Patent Document 1 and Patent Document 2), or a substrate is covered with the above-mentioned semiconductor material. The surface makes the surface of the above-mentioned base material hydrophilic (for example, refer to Patent Document 3). [0003] Patent Document 1 discloses a technique of arranging an n-type semiconductor electrode and a counter electrode in an electrolyte solution, and irradiating the surface of the n-type semiconductor electrode with light to obtain hydrogen and oxygen from the surfaces of both electrodes. Specifically, it is desc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M14/00H01M8/00H01M8/06C25B9/17
CPCY02E10/542H01G9/205H01M14/005C25B1/003Y02E60/364Y02E60/36Y02P20/133C25B1/55
Inventor 野村幸生铃木孝浩宫田伸弘羽藤一仁
Owner PANASONIC CORP