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Substrate processing method and substrate processing apparatus

A substrate processing method and a substrate processing device technology, which are applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as etching and removal of Cu-containing residues that have not yet been obtained

Inactive Publication Date: 2012-02-15
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, there is no technology to simultaneously efficiently clean copper oxide on the Cu surface and etch and remove Cu-containing residues.

Method used

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  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0031] (Structure of Substrate Processing Apparatus for Carrying out the Substrate Processing Method of the First Embodiment)

[0032] figure 1 It is a cross-sectional view schematically showing an example of the structure of a substrate processing apparatus for carrying out the substrate processing method according to the first embodiment of the present invention. Here, a case where a semiconductor wafer (hereinafter simply referred to as a wafer) is used as a substrate will be described (the same applies to the following embodiments).

[0033] The processing apparatus 100 has a substantially cylindrical chamber 1 formed airtightly. On the bottom wall of the chamber 1, a stage 3 for horizontally supporting a wafer W serving as a semiconductor substrate in the chamber 1 is provided.

[0034] A heater 4 is embedded in the mounting table 3 , and the heater 4 is connected to a heater power supply 5 . On the other hand, a thermocouple 6 is provided near the upper surface of the...

no. 2 approach

[0065] (Structure of Film Formation Apparatus for Carrying out the Film Formation Method of Second Embodiment)

[0066] Figure 5 It is a cross-sectional view schematically showing an example of the structure of a substrate processing apparatus used to implement the substrate processing method according to the second embodiment of the present invention.

[0067] The processing apparatus 200 has a substantially cylindrical chamber 51 with an airtight structure. A circular opening 52 is formed at the center of a bottom wall 51 a of the chamber 51 , and a stage 53 for horizontally supporting a wafer W serving as a semiconductor substrate is provided in the opening 52 in the chamber 51 . A heat insulating portion 58 is provided between the mounting table 53 and the bottom wall 51 a, and the heat insulating portion 58 is airtightly bonded to the bottom wall 1 a of the chamber 1 .

[0068] A heater 54 is embedded in the mounting table 53 , and the heater 54 is connected to a heate...

no. 3 approach

[0094] (Structure of Film Formation Apparatus for Carrying out the Film Formation Method of the Third Embodiment)

[0095] Figure 7 It is a cross-sectional view schematically showing an example of a substrate processing apparatus for carrying out the substrate processing method according to the third embodiment of the present invention.

[0096] The processing apparatus 300 is configured as a combination container system of a combination tool type which is divided into a unit for removing Cu-containing substance residues and a unit for removing oxide films, and these units are provided together with a unit for forming a barrier film and a unit for forming a Cu seed film.

[0097] That is, the substrate processing apparatus 300 mainly includes: a Cu-containing substance residue removing unit 101 for removing Cu-containing substance residue; a copper oxide film removing unit 102 for removing a copper oxide film; and a barrier film for forming a barrier film on the inner wall of...

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PUM

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Abstract

In order to remove the copper oxide film on the surface of Cu and to remove the Cu-containing residue adhered on an interlayer insulating film in the Cu wiring structure on a substrate using an organic acid-containing gas, a step of removing the Cu-containing residue by etching by supplying the substrate with a processing gas containing an organic acid gas, while heating the substrate so that the temperature of the substrate is at a first temperature which is relatively low, and a step of removing the copper oxide film on the surface of Cu by means of reaction which is mainly reduction of the copper oxide film on the Cu surface, by supplying the substrate with the processing gas containing the organic acid gas, while heating the substrate so that the temperature of the substrate is at a second temperature which is higher than the first temperature are performed.

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing apparatus for removing oxides on the surface of a Cu film and Cu-containing residues adhering to an interlayer insulating film when forming Cu wiring. Background technique [0002] Recently, in response to the high speed of semiconductor devices, miniaturization of wiring patterns, and high integration requirements, it is required to reduce the capacitance between wirings, improve the conductivity of wiring, and improve electromigration resistance as corresponding Technology, the following technologies are attracting attention: use copper (Cu) with higher conductivity than aluminum (Al) and tungsten (W) and excellent electromigration resistance as the wiring material, and use SiO 2 Cu multilayer wiring technology of low insulating film (low dielectric constant film, Low-k film). [0003] Since copper is easily oxidized and copper oxide with high resistance is eas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/768
CPCH01L21/02063H01L21/76814H01L21/76883H01L21/302H01L21/768
Inventor 三好秀典
Owner TOKYO ELECTRON LTD