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Isolated epitaxial modulation device

A technology of epitaxy and epitaxy, which is applied in the direction of output power conversion devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., and can solve the problems of reducing the overall efficiency of traditional substrate pump clamps, etc.

Inactive Publication Date: 2012-03-14
INTERSIL INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the overall efficiency of conventional substrate pump clamps is reduced

Method used

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  • Isolated epitaxial modulation device
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Embodiment Construction

[0057] In the following detailed description, referring to the accompanying drawings, the accompanying drawings constitute part of the description, and are shown in the accompanying drawings by way of illustrating specific exemplary embodiments. However, it should be understood that other embodiments can be used, and logical, mechanical, and electrical changes can be made. In addition, the methods provided in the drawn figures and the description should not be construed as limiting the order in which individual actions can be performed. Therefore, the following detailed description should not be viewed in a restrictive sense.

[0058] figure 1 It is a block diagram of an embodiment of the isolation epitaxial modulation device 100. The modulation device 100 includes an isolated epitaxial region 102 coupled with a bonding pad 104, an epitaxial modulation network 106 and a ground pad 108. In the exemplary embodiment described herein, the bond pad 104 is implemented as an input / out...

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Abstract

An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.

Description

[0001] Cross references to related applications [0002] This application relates to the following co-determined U.S. patent applications, all of which are incorporated herein by reference: [0003] U.S. Provisional Patent Application Serial No. 61 / 375,360 (Attorney's Case No. SE-2841-TD) filed on August 20, 2010 entitled "Substrate Pump Electrostatic Discharge Device" and referred to herein as the '360 application. Therefore, this application claims the priority of US Provisional Patent Application No. 61 / 375,360. [0004] U.S. Provisional Patent Application Serial No. 61 / 424,625 (Attorney's Case No. SE-2841-TD) filed on December 18, 2010, entitled "Substrate Pump Electrostatic Discharge Device" and referred to herein as the '625 application. Therefore, this application claims the priority of US Provisional Patent Application No. 61 / 424,625. Technical field [0005] The invention relates to the field of electronic systems and semiconductor devices. Background technique [0006] Conv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L23/62H02M1/00
CPCH01L21/76283H01L21/823481H01L24/04H01L27/0277H01L27/0623H01L27/0635H01L2924/01037H01L2924/1305H01L2924/13091H01L2924/14H01L2924/00H01L21/76H01L23/60H01L27/04
Inventor Y·李S·H·沃德曼
Owner INTERSIL INC