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Temperature monitoring method for low temperature rapid heat treatment

A rapid heat treatment, low temperature technology, applied in the direction of post-processing, post-processing details, chemical instruments and methods, etc., can solve the problems of insignificant change in sheet resistance, affecting the effect of temperature monitoring, and difficult to accurately reflect the temperature of rapid heat treatment. The effect of accuracy

Active Publication Date: 2016-05-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in other temperature ranges, the change range of the sheet resistance is not obvious, and it is difficult to accurately reflect the rapid heat treatment temperature, thereby affecting the temperature monitoring effect

Method used

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  • Temperature monitoring method for low temperature rapid heat treatment
  • Temperature monitoring method for low temperature rapid heat treatment
  • Temperature monitoring method for low temperature rapid heat treatment

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no. 1 example

[0035] Figure 3 to Figure 5 A schematic cross-sectional view of a semiconductor substrate at various stages in the first embodiment of the present invention is shown.

[0036] Such as image 3 As shown, a semiconductor substrate 301 is provided on which an amorphous region 303 is formed. The amorphous region 303 can improve the distribution uniformity of the subsequently implanted P-type ions in the semiconductor substrate 301 .

[0037] In a specific embodiment, the amorphous region 303 can be formed by ion implantation, germanium ions, antimony ions, or other semiconductor ions with an atomic number greater than silicon can be implanted, or a larger implantation dose can be implanted with an atomic number lower than that of silicon. ions, the ion implantation dose ranges from 3E14 to 1E16 / square centimeter, and the energy range of the implanted ions ranges from 5keV to 50keV.

[0038] Such as Figure 4 As shown, the semiconductor substrate is implanted with P-type ions,...

no. 2 example

[0046] Figure 6 to Figure 8 A schematic cross-sectional view of a semiconductor substrate at various stages in the second embodiment of the present invention is shown.

[0047] Such as Image 6 As shown, a semiconductor substrate 601 is provided, and P-type ion implantation is performed on the semiconductor substrate 601, so that an ion-doped region 605 doped with P-type impurity ions is formed in the semiconductor substrate 601 .

[0048] Such as Figure 7 As shown, an amorphization treatment is performed on the semiconductor substrate 601 to form an amorphous region 603 on the surface of the semiconductor substrate 601 . In a specific embodiment, the amorphous region 603 is formed by ion implantation, and germanium ions, antimony ions, or other semiconductor ions with an atomic number greater than silicon can be implanted, or a larger implantation dose can be implanted with an atomic number lower than that of silicon. ions, the ion implantation dose ranges from 3E14 to 1...

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Abstract

The invention discloses a method for monitoring the temperature of low-temperature rapid thermal treatment. The method comprises the following steps of: providing a P-type doped semiconductor substrate and forming an amorphous region on the surface of the semiconductor substrate; carrying out ion activating treatment on the semiconductor substrate; carrying out low-temperature rapid thermal treatment on the semiconductor substrate; detecting a substrate parameter of the surface of the semiconductor substrate; and determining the actual reaction temperature of the low-temperature rapid thermal treatment on the basis of the corresponding relation between the substrate parameter and the reaction temperature. According to the method disclosed by the invention, the reaction temperature of the low-temperature rapid thermal treatment is monitored on the basis of the inactivating effect of doped ions in the semiconductor substrate and the monitoring accuracy within temperature range of the low-temperature rapid thermal treatment is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and more specifically, the invention relates to a temperature monitoring method for low-temperature rapid heat treatment. Background technique [0002] In the semiconductor chip manufacturing process, in order to improve the performance of the device, it is necessary to reduce the contact resistance between the conductive region of the semiconductor substrate and the metal interconnection material. For example, for metal-oxide-semiconductor (MOS) transistors, the source, drain, and gate usually use metal silicides with lower resistivity to reduce contact resistance. [0003] In the manufacturing process of MOS transistors, metal silicide formed in a self-aligned manner is usually used. In order to form the metal silicide, a dielectric layer is first formed on a semiconductor substrate including an active region, a drain region and a gate, and then, the dielectric layer that needs to form ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66C30B33/02H01L21/00
Inventor 何永根禹国宾吴兵林静
Owner SEMICON MFG INT (SHANGHAI) CORP