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Method for improving uniformity of working current on wafer during source drain annealing

A working current and wafer technology, which is applied in the direction of circuit, electrical components, semiconductor/solid-state device manufacturing, etc., to achieve the effect of improving the uniformity of working current

Active Publication Date: 2013-12-11
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

According to common knowledge, it can be known that the current has an inverse relationship with the resistance, which means that the Rs at the edge of the wafer is smaller than the Rs at the center, or the Rs at the edge of the wafer is greater than the Rs at the center, that is to say, the temperature adjustment in step 13 , although the Rs is adjusted uniformly on the wafer control wafer, it is not enough to make the Rs on the product wafer also have uniformity

Method used

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  • Method for improving uniformity of working current on wafer during source drain annealing
  • Method for improving uniformity of working current on wafer during source drain annealing

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Embodiment Construction

[0029] In order to make the objectives, technical solutions, and advantages of the present invention more clear, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0030] The present invention is described in detail by using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagram showing the structure will not be partially enlarged according to the general scale, which should not be taken as a limitation of the present invention. should include the three-dimensional spatial dimensions of length, width and depth.

[0031] The schematic flow chart of the method of the present invention for improving the uniformity of the working current during the source-drain annealing on the wafer is as follows: figure 1 shown, it includes the following steps:

[0032] Step 21 , performing ion implantation and annealing on the fi...

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Abstract

The invention provides a method for improving uniformity of working current on a wafer during source drain annealing. The method is used for measuring the working current of areas on the wafer and obtaining the working current with difference between an edge area and a central area of the wafer, so that uniform working current on the surface of the wafer is obtained by means of compensation for the temperature of the edge of the wafer. By the aid of the method, the uniformity of the working current on the wafer during source drain annealing is greatly improved.

Description

technical field [0001] The present invention relates to semiconductor device manufacturing technology, in particular to a method for improving the uniformity of working current during source-drain annealing on a wafer. Background technique [0002] In the front-end process of semiconductor device manufacturing, a process of annealing the source and drain of the semiconductor device is included. Specifically, after the source and drain ion implantation is performed on the semiconductor substrate, the temperature of the source and drain is rapidly increased to a high temperature, and then the source and drain are maintained at the high temperature for a predetermined time, and finally the source and drain are rapidly increased from the high temperature. The process of descending. The working current of the semiconductor device can be controlled through the annealing process. The working current requires certain specifications. If the working current does not meet the specific...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L21/00
Inventor 王祥升彭东海陈勇
Owner SEMICON MFG INT (SHANGHAI) CORP