Method for detecting critical cutting depth of hard and brittle ceramic material
A critical cutting depth, ceramic material technology, used in measuring devices, instruments, optical devices, etc., can solve problems such as poor detection accuracy and poor reliability, and achieve high accuracy, consistent processing conditions, and high detection accuracy.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example 1
[0026] Example 1: The critical depth of cut of monocrystalline silicon is not only related to its own material properties, but also has many other influencing factors. Among them, the cutting depth of plastic brittle transition of different width cuts is different. Generally, wide cuts are prone to brittle fracture, and narrow cuts are easy to plastic cutting. It is generally believed that the width of the cut is determined by the size of the abrasive grain. However, in the detection of the processing area, it will be found that some wide cuts are still plastically cut when the cutting depth is deep, and some narrow cuts will appear brittle fracture when the cutting depth is shallow. Therefore, it is necessary to comprehensively consider cutting. Width and depth of scars. Since the cut shape of the workpiece is formed by cutting with a circular edge, the radius of the edge circle at the tip of the abrasive grain takes into account both the width and depth of the cut, such as ...
example 2
[0031] Example 2: The main crystal planes of single crystal silicon are {100}, {110} and {111}, and the interplanar spacing, surface density and bond density of the crystal planes are all different, so single crystal silicon crystal has the characteristics of anisotropy, The {111} crystal plane has the largest atomic density and the highest elastic modulus, but the interplanar distance is large, the atomic bond density on the plane is low, and the {111} crystal planes are relatively fragile. The elastic modulus and atomic bond of the {110} crystal plane are second only to the {111} crystal plane. The {100} interplanar spacing is the smallest and the bond density is the largest. Therefore, the single crystal silicon crystal is most likely to be cleaved along the {111} crystal plane at room temperature, and the {111} crystal plane is the second cleavage plane. At present, the most commonly used in the semiconductor industry are single crystal silicon wafers with {100} crystal p...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 