Laser Diode Components and Semiconductor Optical Amplifier Components
A technology of laser diodes and optical amplifiers, which is applied in the structure of semiconductor amplifiers, semiconductor lasers, and optical waveguide semiconductors, and can solve problems such as hindering the spread of laser technology and expensive solid-state laser light sources
Inactive Publication Date: 2016-08-24
SONY CORP +1
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- Abstract
- Description
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Problems solved by technology
However, titanium / sapphire lasers are expensive larger solid-state laser sources, which is the main factor hindering the spread of laser technology
Method used
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Embodiment 1
[0048] 2. Example 1 (laser diode assembly according to the embodiment of the present invention)
Embodiment 2
[0049] 3. Example 2 (a modification of Example 1)
[0050] 4. Embodiment 3 (another modification of Embodiment 1)
Embodiment 4
[0051] 5. Example 4 (Semiconductor optical amplifier assembly according to the first embodiment of the present invention)
[0052] 6. Example 5 (a modification of Example 4)
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A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element (82,92,94-97). A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.
Description
Technical field [0001] The invention relates to a laser diode assembly and a semiconductor optical amplifier assembly. Background technique [0002] Nowadays, ultra-short pulse ultra-high power lasers are actively used for research in the field of cutting-edge science using laser beams with attosecond or femtosecond pulse times. From the scientific interest in explaining the ultra-high-speed phenomenon in picoseconds or femtoseconds, the ultrashort-wave pulsed laser is actively studied, and in addition, the practical applications of the ultrashort-wave pulsed laser such as microfabrication using high peak power or two-photon imaging are actively studied. A high-power ultrashort pulse laser diode device including a GaN-based compound semiconductor with an emission wavelength band of 405 nm is expected to be the light source of the volumetric optical disk system (volumtric optical disk) expected for the next-generation optical disk system after the Blu-ray Disc system, the medical ...
Claims
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IPC IPC(8): H01S5/065H01S5/14H01S5/068
CPCB82Y20/00H01S5/0064H01S5/0071H01S5/0078H01S5/028H01S5/04252H01S5/04256H01S5/06251H01S5/0657H01S5/101H01S5/1014H01S5/1085H01S5/141H01S5/16H01S5/2009H01S5/22H01S5/3063H01S5/309H01S5/3211H01S5/3216H01S5/34333H01S5/50H01S2301/176
Inventor 横山弘之河野俊介仓本大
Owner SONY CORP