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Semiconductor memory device

A memory and semiconductor technology, applied in static memory, digital memory information, information storage, etc., can solve the problem of large column control block size

Inactive Publication Date: 2012-07-18
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the size of the column control block is larger

Method used

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  • Semiconductor memory device
  • Semiconductor memory device
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Embodiment Construction

[0050] Embodiments of the present invention relate to a method for manufacturing a column control block of a semiconductor memory device.

[0051] Figure 6 is a block diagram of a read path in a DRAM device with a stacked memory bank structure according to an embodiment of the present invention.

[0052] refer to Figure 6 , the DRAM device in this embodiment includes first and second memory banks BANK0 and BANK1 stacked in the column direction, a global data bus GIO corresponding to the stacked first and second memory banks BANK0 and BANK1, and a The common global data bus driving unit GIODRV_COM multiplexes data on the first and second local data buses LIO_DN and LIO_UP respectively corresponding to the first and second banks BANK0 and BANK1 and transmits the multiplexing result to the global data bus GIO.

[0053] exist Figure 6 , the second bank BANK1 is set on the first bank BANK0. That is, a two-bank BANK0 stack structure is realized. However, more than four banks...

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Abstract

A semiconductor memory device includes a plurality of banks stacked in a column direction, a global data line corresponding to the plurality of banks and a common global data line driving unit for multiplexing data on a plurality of local data lines corresponding to each of the banks to transmit the multiplexed result to the global data line. The common global data line driving unit is shared by a plurality of banks.

Description

[0001] The present invention application is a divisional application of the invention patent application with the application date of September 22, 2008, the application number "200810211449.7", and the invention name "semiconductor storage device". [0002] Cross References to Related Applications [0003] This application claims the benefit of Korean Patent Application Nos. 2007-0098223 and 2008-0040928 filed on September 28, 2007 and April 30, 2008, respectively, the entire contents of which are hereby incorporated by reference. technical field [0004] The present invention relates to a method for manufacturing a semiconductor memory device, and more particularly, to a method for manufacturing a column control block of a semiconductor memory device. Background technique [0005] Most semiconductor memory devices, such as dynamic random access memory (DRAM) devices, employ a hierarchical data bus structure. That is, the local data bus is provided in the bank area, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/10G11C8/12G11C11/4093
CPCG11C5/025G11C7/06G11C7/1048G11C11/4091G11C11/4093G11C11/4096
Inventor 郭承煜
Owner SK HYNIX INC