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Calculation method for double absorption layer attenuation phase-shift mask diffractinonal field and degree of polarization

A technology of attenuation phase shift and double absorption layer, which is applied in the photoplate making process of the pattern surface, the original for photomechanical processing, optics and other directions

Active Publication Date: 2014-03-12
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

[0008] PRIOR ART (JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL.22, NO.10, OCTOBER 2004) discloses a method for analyzing the diffraction of a grating-embedded multilayer structure using an extended (2×2) matrix method , but it only analyzes the diffraction of one layer of grating

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  • Calculation method for double absorption layer attenuation phase-shift mask diffractinonal field and degree of polarization
  • Calculation method for double absorption layer attenuation phase-shift mask diffractinonal field and degree of polarization
  • Calculation method for double absorption layer attenuation phase-shift mask diffractinonal field and degree of polarization

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[0121] Ta / SiO is calculated here 2 In Att.PSM, when TE and TM are normal incidence (193nm), the diffraction efficiency and polarization degree of 0 and 1 order at different mask periods. Among them, the refractive index, extinction coefficient and thickness of Ta are 1.63, 2.58 and 21nm.SiO 2 The refractive index, extinction coefficient, and thickness are 1.63, 0.006, and 144nm, respectively. The dense lines of 1:1 are analyzed here, and the duty ratio is 0.5.

[0122] Figure 5 Normal incidence of TE and TM polarized light on Ta / SiO 2 Att.PSM, the diffraction efficiency of 0 and 1 order changes with the period. (a) is the relationship diagram of the 0th order diffraction efficiency with the mask period, and (b) is the relationship diagram of the 1st order diffraction efficiency with the mask period. It can be seen that the diffraction efficiencies of the 0th order of TE and TM polarizations show significant periodic changes, which are mainly caused by the polarization-dep...

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Abstract

The invention provides a calculation method for a double absorption layer attenuation phase-shift mask diffractinonal field and degree of polarization, which includes the following specific steps: step 1 setting the space harmonic number n when an electromagnetic field is expanded; step 2 solving components along tangential and normal directions of wave vector of each diffraction order; step 3 enabling dielectric constant of every layer of grating to be in Fourier series expansion; step 4 solving the attenuation phase-shift mask diffractinonal field, step 5 solving diffraction efficiency of each diffraction order; and step 6 solving degree of polarization DoPm of each diffraction order, and judging polarization type of an attenuation phase-shift mask. By obtaining corresponding diffraction efficiency and solving the polarization type of the mask according to the diffraction efficiency, the type of the mask can be judged quickly based on the method so as to meet subsequent research requirement.

Description

technical field [0001] The invention relates to a method for calculating the diffraction field and polarization degree of a double-absorbing layer attenuation phase-shift mask, and belongs to the technical field of photolithographic resolution enhancement. Background technique [0002] The rapid development of the semiconductor industry is mainly due to the progress of micro-processing technology in microelectronics technology, and photolithography technology is one of the most critical manufacturing technologies in chip preparation. Due to the continuous innovation of optical lithography technology, it has repeatedly broken through the expected optical exposure limit, making it the mainstream technology of current exposure. [0003] The lithography system is mainly divided into four parts: illumination system (light source), mask, projection system and wafer. The light incident on the mask is diffracted, and the diffracted light enters the projection system and forms an in...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/26
Inventor 李艳秋杨亮
Owner BEIJING INSTITUTE OF TECHNOLOGYGY