Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device, method of manufacturing semiconductor device, and electronic device

A technology of semiconductors and electronic components, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as connection failures and prominent electrode displacements

Inactive Publication Date: 2015-05-20
FUJITSU LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In flip-chip bonding for connecting the protruding electrodes of a semiconductor element to the protruding electrodes of a circuit board or the protruding electrodes of an electronic component such as a semiconductor element, displacement of the protruding electrodes occurs, which in turn causes such as unconnected state and short circuit connection failure for

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device, method of manufacturing semiconductor device, and electronic device
  • Semiconductor device, method of manufacturing semiconductor device, and electronic device
  • Semiconductor device, method of manufacturing semiconductor device, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0214] A semiconductor element having a size of 3.5 mm×7 mm (hereinafter referred to as “first semiconductor element”) on which protruding electrodes were formed was prepared. The protruding electrodes each included a Cu pillar portion having a diameter of 30 μm and a height of 35 μm, and tin-silver (SnAg) solder formed on the tip of the pillar to a height of 10 μm, and were arranged at a pitch of 50 μm.

[0215] Further, a base substrate made of Si having a size of 15 mm×15 mm (hereinafter referred to as “Si base substrate”) on which protruding electrodes were formed was prepared. The protruding electrodes have the same size and structure as the first semiconductor element, and are arranged in the same pattern as the first semiconductor element.

[0216] In addition, a Si substrate having no active layer was used as a semiconductor element having via holes (hereinafter referred to as "second semiconductor element"). The second semiconductor element was formed as follows. Fi...

example 2

[0221] A base substrate made of resin having a size of 35 mm×35 mm (hereinafter referred to as “resin base substrate”) on which protruding electrodes were formed was prepared. The protruding electrodes have the same size and structure as the first semiconductor element and are arranged in the same pattern as the first semiconductor element. The above-mentioned first semiconductor element is mounted on the resin base substrate using the above-mentioned second semiconductor element.

[0222] To do so, first, the second semiconductor element formed with through holes is mounted on the resin base substrate using a flip chip bonder so that the through holes of the second semiconductor element and the protruding electrodes of the resin base substrate are aligned. Next, the protruding electrodes of the first semiconductor element and the through holes of the second semiconductor element are aligned, and the first semiconductor element is mounted using a flip chip bonder. Subsequentl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device includes a semiconductor element (2) and an electronic element (3). The semiconductor element has a first protruding electrode (2a), and the electronic element has a second protruding electrode (3a). A substrate (4) is disposed between the semiconductor element (2) and the electronic element (3). The substrate has a through-hole (4a) in which the first and second protruding electrodes (2a, 3a) are fitted. The first and second protruding electrodes are connected together inside the through-hole (4a) of the substrate.

Description

technical field [0001] Embodiments discussed herein relate to semiconductor devices, methods of manufacturing semiconductor devices, and electronic devices using semiconductor devices. Background technique [0002] Flip-chip bonding is a method of connecting a semiconductor element (semiconductor chip) to a circuit board. In flip chip bonding, for example, protruding electrodes (connection terminals) such as solder bumps are formed on either or both of the semiconductor element and the circuit board to connect the semiconductor element and the circuit board together using the protruding electrodes . Recently, such flip chip bonding has been applied to semiconductor devices having a chip-on-chip structure in which chips are stacked and connected to another chip. [0003] For a semiconductor device having a laminated structure, a chip having connection terminals may be flip-chip bonded to another chip having feedthrough vias so that the connection terminals are connected to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/00H01L25/065H01L23/48H01L23/498H01L21/60H01L21/50
CPCH01L23/481H01L24/16H01L24/81H01L25/0657H01L25/50H01L29/0657H01L2224/1308H01L2224/13082H01L2224/13111H01L2224/13144H01L2224/13147H01L2224/45144H01L2224/48227H01L2224/73207H01L2224/81136H01L2225/0651H01L2225/06513H01L2225/06541H01L2225/06555H01L2225/06572H01L2225/06575H01L2924/01013H01L2924/01029H01L2924/01033H01L2924/01079H01L2924/01082H01L2924/10253H01L2924/15159H01L2924/15321H01L2924/15787H01L2924/1579H01L2224/16147H01L21/76898H01L24/48H05K1/18H05K1/181H01L2224/1147H01L2224/13024H01L2224/14181H01L2224/94H01L2924/00013H01L2924/01006H01L2924/01047H01L2924/01075H01L2924/014H05K2201/09063H05K2201/1053H05K2201/10545H05K2201/10674H01L2224/11002H01L2224/16141H01L24/13H01L24/17H01L24/73H01L2224/02372H01L2224/05548H01L2224/05567H01L2224/05571H01L2224/05573H01L2224/05624H01L2224/13025H01L2224/13027H01L2224/131H01L2224/16238H01L2224/1703H01L2224/17051H01L2224/17181H01L2224/73204H01L2224/8114H01L2224/81192H01L2224/81193H01L2224/81815H01L2224/81986H01L2224/83102H01L2224/96H01L2924/01014H01L2224/48599H01L25/0652H01L2224/1624H01L2224/9201H01L2924/00014H01L2224/0401H01L2224/13006H01L2924/351H01L2224/48095H01L2224/73265H01L2224/16148H01L2224/13099H01L2224/11H01L2224/05099H01L2224/13599H01L2224/05599H01L2224/29099H01L2224/29599H01L2224/81H01L2924/00012H01L2224/48624H01L2924/00H01L2224/05552H01L2224/45099H01L2224/45015H01L2924/207H01L23/488
Inventor 赤松俊也
Owner FUJITSU LTD