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Semiconductor device

A semiconductor and metal film technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of cracks and deformation of the insulating film 53, and achieve the effect of preventing cracks

Inactive Publication Date: 2012-08-08
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the conventional technology, the second metal film 52 and the second metal film 51 may both be deformed depending on the magnitude of the stress generated by the impact of the wire bonding, and cracks may be generated in the insulating film 53, which poses a problem.

Method used

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  • Semiconductor device
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Examples

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Comparison scheme
Effect test

Deformed example 1

[0026] image 3 It is a schematic cross-sectional view showing an example of Modification 1. FIG. exist figure 1 In the illustrated embodiment, the first metal film 11 is provided on the insulating film 14, but as image 3 As shown, the first metal film 11 may be embedded in the insulating film 14 . Furthermore, the second metal film 12 is provided on the first metal film 11 . At this time, the insulating film 14 has a groove, and the first metal film 11 is embedded in the groove. The bottom surface of the groove is formed in a substantially planar shape. In this structure, since no step is formed, the first metal film can be formed thick. In this way, deformation caused by the stress of the second metal film 12 is more easily absorbed by the first metal film 11 .

Deformed example 2

[0028] Figure 4 It is a schematic cross-sectional view showing an example of Modification 2. FIG. its with image 3 The structure is substantially the same, but the difference is that the bottom surface of the groove of the insulating film 14 is in the image 3 Formed into a roughly planar shape, and such as Figure 4 As shown, it is formed as a downwardly convex curved surface or a part of a substantially spherical surface. That is, the bottom surface of the first metal film 11 may be formed as a part of a downwardly convex curved surface or an approximately spherical surface. This prevents stress from concentrating on the corners of the bottom surface of the first metal film 11 , and thus deformation of the second metal film 12 due to stress is more easily absorbed by the first metal film 11 .

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Abstract

To prevent generation of cracks in an insulating film provided under a bonding pad, a semiconductor device includes a three-layered bonding pad, and the three-layered bonding pad includes a first metal film, a second metal film, and a third metal film, in which the second metal film has a Young's modulus higher than a Young's modulus of the first metal film and a Young's modulus of the third metal film.

Description

technical field [0001] The present invention relates to a semiconductor device having pads. Background technique [0002] First, a conventional semiconductor device having pads will be described. The semiconductor device is provided with pads, and the pads are used for supplying a power supply voltage or a ground potential to the semiconductor integrated circuit, and for transmitting and receiving data with the outside. Figure 5 It is a schematic cross-sectional view showing the vicinity of a pad of a conventional semiconductor device having a pad. [0003] The first metal film 51 is provided on the insulating film 53 provided on the surface of the semiconductor substrate 50 . The second metal film 52 is directly provided on the first metal film 51 . The protective film 54 covers the second metal film 52 and has an opening on the pad. The protective film 54 covers the second metal film 52 in a portion of the protective film 54 other than the opening. Therefore, the open...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/48
CPCH01L2224/04042H01L2224/05082H01L2924/01033H01L2924/01029H01L2224/05124H01L2924/01074H01L2224/02166H01L24/05H01L2224/05624H01L2224/05147H01L2924/01013H01L2224/05184
Inventor 山本祐广
Owner SII SEMICONDUCTOR CORP