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Reference cells for spin torque based memory device

A storage device, spin torque technology, applied in the field of reference primitives, which can solve problems such as interference data, "read" interference, etc.

Active Publication Date: 2012-09-26
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A problem associated with spin-torque storage devices is that the act of reading reference primitives can interfere with the data
This current may accidentally write to the reference primitive, causing a "read" disturb

Method used

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  • Reference cells for spin torque based memory device
  • Reference cells for spin torque based memory device
  • Reference cells for spin torque based memory device

Examples

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Embodiment Construction

[0016] Such as figure 1 As shown in, according to an embodiment of the present invention, a storage array 100 including a plurality of rows 10-12 and columns 15-22 is provided. Among the plurality of rows 10-12, each row 10-12 is a data word representing, for example, a data bit and an error correction code (ECC) check bit. The ECC check bit is used to correct any errors found in the data bits when reading the data. The first row 10 represents data word n-1, the second row 11 represents data word n, and the third row 12 represents data word n+1. Provide a second plurality of rows 13 and 14. In the second plurality of rows 13 and 14, each row represents a reference primitive. Row 13 represents a reference cell preset to a “0” storage state (for example, a high resistance state), and row 14 represents a reference cell preset to a “1” storage state (for example, a low resistance state).

[0017] According to an embodiment of the present invention, when reading data, the resistanc...

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PUM

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Abstract

A method of reading and correcting data within a memory device that includes reading each data bit of a data word using a plurality of reference cells corresponding to each data bit, performing error detection on the read data bits, and correcting a read data bit when an error is detected using error correction code (ECC) and writing each corresponding reference cells to an original memory state thereof.

Description

Technical field [0001] The present invention relates to a magnetic random access memory, and more particularly, to a reference cell used for a spin torque-based storage device. Background technique [0002] A spin-torque magnetic random access memory (MRAM) device uses a spin-torque-based storage element, for example, a pinned layer, a tunnel barrier layer, and a free layer are included in a magnetic tunnel junction (MTJ) stack. The magnetization of the pinned layer is fixed so that the free layer becomes parallel or anti-parallel to the pinned layer when current passes through the MTJ stack. The resistance of the MTJ stack depends on the relative orientation of the free and pinned layers. When the free layer is parallel to the pinned layer, the MTJ stack is in a low resistance state (for example, the "1" storage state), and when they are antiparallel, the MTJ stack is in a high resistance state (for example, the "0" storage state) . [0003] During the reading of data, a small ...

Claims

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Application Information

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IPC IPC(8): G06F11/10
CPCH03M13/13G06F11/1048
Inventor J·K·德布罗斯D·C·沃尔莱奇
Owner GLOBALFOUNDRIES INC