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Double-circuit high-voltage large power IGBT (Insulated Gate Bipolar Translator) drive circuit

A technology of drive circuit and power amplifier circuit, applied in the direction of output power conversion device, electrical components, etc., can solve the problems of inability to take into account drive and protection performance, low cost, etc., achieve perfect protection function, low cost, and improve isolation voltage level Effect

Inactive Publication Date: 2014-11-26
CHINA UNIV OF MINING & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problem of the current IGBT driver products is that they cannot take into account good driving and protection performance and low cost

Method used

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  • Double-circuit high-voltage large power IGBT (Insulated Gate Bipolar Translator) drive circuit
  • Double-circuit high-voltage large power IGBT (Insulated Gate Bipolar Translator) drive circuit
  • Double-circuit high-voltage large power IGBT (Insulated Gate Bipolar Translator) drive circuit

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Embodiment Construction

[0013] like figure 1 As shown, a dual-channel high-voltage high-power IGBT driving circuit is composed of a dual-channel interlocking and optical signal conversion transmitting circuit 1 and a dual-channel driving module 2, and the dual-channel interlocking and optical signal conversion transmitting circuit 1 adopts a hardware interlocking circuit to receive The two-way drive signal is interlocked, and the interlocked drive signal is input to the two-way drive module 2 to perform switching operations on the IGBT. Off signal, or one of the signals is an off signal, and the other signal is an on signal, but there will not be two on signals at the same time. The two-way interlocking and optical signal conversion transmitting circuit 1 and the two-way driving module 2 are connected through an optical fiber.

[0014] The two-way interlock and optical signal conversion and emission circuit 1 includes a drive signal logic interlock circuit U1, a first optical signal conversion and e...

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Abstract

The invention discloses a double-circuit high-voltage large power IGBT (Insulated Gate Bipolar Translator) drive circuit and relates to the technical field of IGBT drive. The circuit consists of a double-circuit interlocking and optical signal transforming transmission circuit and a double-circuit driving module, wherein the double-circuit interlocking and optical signal transforming transmission circuit adopts a hardware interlocking circuit to interlock the received double-circuit driving signal; the interlocked driving signal is input to the double-circuit driving module to switch IGBT; the driving signal processed by the double-circuit interlocking and optical signal transforming transmission circuit is a double-circuit turn-off signal, or one-circuit signal is the turn-off signal, and the other circuit signal is an open signal. The drive circuit has the advantages that an optical fiber and an isolation power source are used as isolation media to improve the isolation voltage grade; the drive circuit is perfected in the protecting functions, and the IGBT drive circuit is high in reliability and low in cost.

Description

technical field [0001] The invention relates to the technical field of IGBT driving, in particular to a dual-channel high-voltage and high-power IGBT driving circuit. Background technique [0002] Insulated gate bipolar transistor IGBT is a composite device, its input control part is MOSFET, and the output stage is bipolar junction triode transistor, which has high input impedance of MOSFET, voltage control, low driving power and fast switching speed , the advantages of higher operating frequency, and the advantages of lower saturation voltage of power triode, large voltage and current capacity, and wide safe working area, so IGBT is widely used in power equipment such as high-power inverters and switching power supplies. IGBT drive technology is one of the keys in the application process of IGBT. The output characteristics of the drive circuit and the short-circuit over-current protection function are the prerequisites for the safe and efficient operation of the IGBT. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/092
Inventor 伍小杰徐立华耿乙文李小强柏浩峰朱方田郭力峰朱玉琼王春华李洪亮严庆增
Owner CHINA UNIV OF MINING & TECH
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