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IGBT (Insulated Gate Bipolar Translator) driving protection circuit

A technology for driving protection circuits and protection circuits, which is applied in the direction of electrical components, electronic switches, pulse technology, etc., can solve the problems of high cost and complex circuits, and achieve the effect of low cost and simple circuit structure

Active Publication Date: 2012-10-24
FOSHAN BAYKEE NEW ENERGY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are many protection circuits for IGBT driving, but the existing circuits are too complicated or costly

Method used

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  • IGBT (Insulated Gate Bipolar Translator) driving protection circuit
  • IGBT (Insulated Gate Bipolar Translator) driving protection circuit

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Embodiment Construction

[0018] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0019] Such as figure 1 An IGBT driving protection circuit is shown, which includes: a driving signal blocking control circuit for blocking the IGBT driving signal, a first protection circuit for protecting the IGBT, and an undervoltage circuit for performing undervoltage protection on the driving power supply of the IGBT Protection circuit, the output end of the drive signal blocking control circuit is connected to the input end of the first protection circuit through the first photoelectric coupling isolation circuit, and the output end of the first protection circuit is connected to the drive signal blocking control circuit through the second photoelectric coupling isolation circuit The input terminal and the output terminal of the undervoltage protection circuit are connected to the input terminal of the second photoelectric coupl...

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) driving protection circuit which comprises a driving signal locking control circuit, a first protection circuit and an undervoltage protection circuit, wherein the first protection circuit comprises a driving power amplifying circuit, a grid protection circuit, an IGBT over-temperature protection circuit, an IGBT saturation voltage drop protection circuit and a grid voltage drop soft turn-off control circuit; an output end of a first photoelectric coupling isolating circuit passes by the driving power amplifying circuit and the grid protection circuit in turn and then is connected with a grid of an IGBT; a collector of the IGBT passes by the IGBT over-temperature protection circuit and the grid voltage drop soft turn-off control circuit in turn and then is connected with a corresponding input end of the driving power amplifying circuit; and the collector of the IGBT passes by the IGBT saturation voltage drop protection circuit and the grid voltage drop soft turn-off control circuit in turn and then is connected with the corresponding input end of the driving power amplifying circuit. The IGBT driving protection circuit provided by the invention has the advantages of simple structure, reliable work and low cost.

Description

technical field [0001] The invention relates to an IGBT drive protection circuit. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is an insulated gate bipolar transistor, which is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has a MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. IGBTs are widely used in power switching devices. [0003] According to the working characteristics of IGBT, its driving voltage should be within ±20V. When the driving voltage of IGBT is lower than 8V, it works in the amplification area, and the conduction voltage drop is very large. As the driving voltage increases, the saturated conduction voltage drop decreases. ; And if the driving voltage is too low, the saturated conduction voltage drop will be large, and the efficiency will be low. When the driving voltage is lower t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567H03K17/08
Inventor 潘世高罗蜂黄敏
Owner FOSHAN BAYKEE NEW ENERGY TECH INC
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