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Memory system having memory and memory controller and operation method thereof

A technology of memory controller and storage system, which is applied in the direction of memory system, static memory, digital memory information, etc., and can solve the problems of increasing the manufacturing cost of memory

Inactive Publication Date: 2012-10-31
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, these processes can increase the manufacturing cost of the memory

Method used

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  • Memory system having memory and memory controller and operation method thereof
  • Memory system having memory and memory controller and operation method thereof
  • Memory system having memory and memory controller and operation method thereof

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Embodiment Construction

[0016] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. However, the present invention may be implemented in various forms and should not be construed as being limited to the set forth embodiments of the present invention. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the description, the same reference numerals denote the same parts in different drawings and embodiments of the invention.

[0017] figure 1 and figure 2 is a diagram showing an area where data is stored inside the memory 100

[0018] see figure 1 , the memory 100 includes a plurality of banks BANK0 to BANK7. The number of banks may vary between memories. Generally, a memory includes four, eight or sixteen memory banks. figure 1 A memory with eight banks is illustrated.

[0019] Such as figure 1...

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Abstract

An operation method of a memory system including a memory and a memory controller includes transmitting defective-cell address information to the memory controller from the memory at an initial operation of the memory, wherein the defective-cell address information includes an address of a defective cell of the memory, and accessing, by the memory controller, an area of the memory excluding an area indicated by the defective-cell address information inside the memory.

Description

[0001] Cross-references to related applications [0002] This application claims priority from Korean Patent Application No. 10-2011-0038528 filed Apr. 25, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments of the present invention relate to a memory, a memory controller, and a memory system, and more particularly, to techniques for handling manufacturing defects in a memory. Background technique [0004] In the early days of the semiconductor memory industry, a large number of raw commodity dies (eg, blocks of semiconducting material) with defect-free cells fabricated in memory chips via semiconductor fabrication processes could be distributed over a semiconductor wafer. However, as memory capacity increases, it becomes difficult to manufacture memory chips with defect-free cells. Defective cells are repaired by a method in which spare memory, ie redundant memory, is provided in place of the defective cel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
CPCG11C14/0054G11C29/50G06F12/00G11C7/10G11C29/18
Inventor 辛尚勋李太龙
Owner SK HYNIX INC